JPS5766668A - 2-gate semiconductor device - Google Patents

2-gate semiconductor device

Info

Publication number
JPS5766668A
JPS5766668A JP55142710A JP14271080A JPS5766668A JP S5766668 A JPS5766668 A JP S5766668A JP 55142710 A JP55142710 A JP 55142710A JP 14271080 A JP14271080 A JP 14271080A JP S5766668 A JPS5766668 A JP S5766668A
Authority
JP
Japan
Prior art keywords
gate
driven
applied voltage
effect
voltage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP55142710A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6148785B2 (enrdf_load_stackoverflow
Inventor
Minami Takeuchi
Tomio Komiyama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP55142710A priority Critical patent/JPS5766668A/ja
Publication of JPS5766668A publication Critical patent/JPS5766668A/ja
Publication of JPS6148785B2 publication Critical patent/JPS6148785B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/291—Gate electrodes for thyristors

Landscapes

  • Thyristors (AREA)
JP55142710A 1980-10-13 1980-10-13 2-gate semiconductor device Granted JPS5766668A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55142710A JPS5766668A (en) 1980-10-13 1980-10-13 2-gate semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55142710A JPS5766668A (en) 1980-10-13 1980-10-13 2-gate semiconductor device

Publications (2)

Publication Number Publication Date
JPS5766668A true JPS5766668A (en) 1982-04-22
JPS6148785B2 JPS6148785B2 (enrdf_load_stackoverflow) 1986-10-25

Family

ID=15321763

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55142710A Granted JPS5766668A (en) 1980-10-13 1980-10-13 2-gate semiconductor device

Country Status (1)

Country Link
JP (1) JPS5766668A (enrdf_load_stackoverflow)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01133989U (enrdf_load_stackoverflow) * 1988-03-08 1989-09-12

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4728449U (enrdf_load_stackoverflow) * 1971-03-22 1972-12-01

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4728449U (enrdf_load_stackoverflow) * 1971-03-22 1972-12-01

Also Published As

Publication number Publication date
JPS6148785B2 (enrdf_load_stackoverflow) 1986-10-25

Similar Documents

Publication Publication Date Title
GB1057823A (en) Improvements in semiconductor switch
US4243999A (en) Gate turn-off thyristor
IE32763L (en) High speed switching rectifier
JPS57117276A (en) Semiconductor device
US4520277A (en) High gain thyristor switching circuit
GB1532097A (en) Integrated gate assisted turn-off amplifying gate thyristor and a method for making same
GB1475320A (en) Semiconductor devices
JPS5766668A (en) 2-gate semiconductor device
US4231054A (en) Thyristor with starting and generating cathode base contacts for use in rectifier circuits
JPS5783830A (en) Controller using gate turn-off thyristor
JPS5718360A (en) Gate controlling semiconductor element
JPS5784175A (en) Semiconductor device
EP0301761A3 (en) Thyristors
JPS57173974A (en) Semiconductor device
JPS556847A (en) Semiconductor device
JPS5637676A (en) Field effect type semiconductor switching device
JPS5727052A (en) Semiconductor device
JPS56104467A (en) Reverse conducting thyristor
JPS5771178A (en) Semiconductor device
JPS57177554A (en) Semiconductor integrated circuit device
JPS57206072A (en) Semiconductor device
JPS5775032A (en) Gate circuit for gate turn-off thyristor
JPS5684033A (en) Gate circuit of gate turn-off thyristor
JPS5681970A (en) Semiconductor switching device
JPS5757029A (en) Semiconductor switch