JPS5763860A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5763860A
JPS5763860A JP13958580A JP13958580A JPS5763860A JP S5763860 A JPS5763860 A JP S5763860A JP 13958580 A JP13958580 A JP 13958580A JP 13958580 A JP13958580 A JP 13958580A JP S5763860 A JPS5763860 A JP S5763860A
Authority
JP
Japan
Prior art keywords
phosphorus
diffusion
stage
region
electromotive force
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP13958580A
Other languages
Japanese (ja)
Other versions
JPH035070B2 (en
Inventor
Katsuyuki Kinoshita
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP13958580A priority Critical patent/JPS5763860A/en
Publication of JPS5763860A publication Critical patent/JPS5763860A/en
Publication of JPH035070B2 publication Critical patent/JPH035070B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:To eliminate the influence on a charactersitic of electromotive force caused by a back-surface diffused layer and to improve thereby a yield rate, by forming a phosphorus diffusion layer in a part of the back surface of a silicon substrate wherein MOSFET is formed. CONSTITUTION:Diffusion of phosphorus for gettering is conducted selectively in the back surface of the silicon substrate 1 wherein N-channel MOSFET is formed, whereby a phosphorus diffusion region 2 is formed. A region 9 wherein the diffusion of phosphorus is not conducted and a stage 4 for measurement contact with each other in an ohmic fashion. The gettering effect is sufficient if there is the phosphorus diffusion region of 40% or more in one chip. Since the substrate 1 and the stage 4 contact with each other directly, the variation of the characterisitc due to the electromotive force of PN junction is not caused between the characteristic value in the state of a wafer and that after assembling, and thus the yield rate of the device can be raised.
JP13958580A 1980-10-06 1980-10-06 Semiconductor device Granted JPS5763860A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13958580A JPS5763860A (en) 1980-10-06 1980-10-06 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13958580A JPS5763860A (en) 1980-10-06 1980-10-06 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS5763860A true JPS5763860A (en) 1982-04-17
JPH035070B2 JPH035070B2 (en) 1991-01-24

Family

ID=15248684

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13958580A Granted JPS5763860A (en) 1980-10-06 1980-10-06 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5763860A (en)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52150985A (en) * 1976-06-09 1977-12-15 Siemens Ag Semiconductor device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52150985A (en) * 1976-06-09 1977-12-15 Siemens Ag Semiconductor device

Also Published As

Publication number Publication date
JPH035070B2 (en) 1991-01-24

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