JPS5761695A - Method for growing single crystal by pulling - Google Patents
Method for growing single crystal by pullingInfo
- Publication number
- JPS5761695A JPS5761695A JP13337080A JP13337080A JPS5761695A JP S5761695 A JPS5761695 A JP S5761695A JP 13337080 A JP13337080 A JP 13337080A JP 13337080 A JP13337080 A JP 13337080A JP S5761695 A JPS5761695 A JP S5761695A
- Authority
- JP
- Japan
- Prior art keywords
- heater
- lowering
- raw material
- liquid level
- crucible
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
PURPOSE: To prevent the formation of bubbles and bending caused by the loss of thermal balance, by switching the taps of the upper winding of the heater for heating the crucible containing the molten raw material stepwise from the top downward according to the lowering of the liquid level of the raw material caused by the pulling of the single crystal.
CONSTITUTION: A heat-insulating alumina cylinder 32 closely surrounding a platinum curcible 31, is furnished with a heater 33 wound with an alloy resistance wire. The length of the heater is slightly longer than the height D of the crucible 31. At this uper part of the heater, e.g. of the length of (2/3)×D, taps 34 are attached to every turn of the resistance wire, and connected to the power source 35 having a temperature regulator, through a changeover switch 36. The switch 36 is gradually switched to the lower tap according to the lowering of the liquid level of the raw material by the growth of the crystal. The heat radiation from the inner wall of the crucible exposed by the lowering of the liquid level can be prevented by this process,and the troubles caused by the radiation are eliminated.
COPYRIGHT: (C)1982,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13337080A JPS5761695A (en) | 1980-09-25 | 1980-09-25 | Method for growing single crystal by pulling |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13337080A JPS5761695A (en) | 1980-09-25 | 1980-09-25 | Method for growing single crystal by pulling |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5761695A true JPS5761695A (en) | 1982-04-14 |
Family
ID=15103132
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP13337080A Pending JPS5761695A (en) | 1980-09-25 | 1980-09-25 | Method for growing single crystal by pulling |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5761695A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6484090A (en) * | 1987-09-24 | 1989-03-29 | Daiho Giken | Induction furnace |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5016043U (en) * | 1973-06-08 | 1975-02-20 | ||
| JPS55104995A (en) * | 1979-01-29 | 1980-08-11 | Toshiba Corp | Production of single crystal |
-
1980
- 1980-09-25 JP JP13337080A patent/JPS5761695A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5016043U (en) * | 1973-06-08 | 1975-02-20 | ||
| JPS55104995A (en) * | 1979-01-29 | 1980-08-11 | Toshiba Corp | Production of single crystal |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6484090A (en) * | 1987-09-24 | 1989-03-29 | Daiho Giken | Induction furnace |
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