JPS5758322A - Planar plasma etching device - Google Patents

Planar plasma etching device

Info

Publication number
JPS5758322A
JPS5758322A JP56123139A JP12313981A JPS5758322A JP S5758322 A JPS5758322 A JP S5758322A JP 56123139 A JP56123139 A JP 56123139A JP 12313981 A JP12313981 A JP 12313981A JP S5758322 A JPS5758322 A JP S5758322A
Authority
JP
Japan
Prior art keywords
plasma etching
etching device
planar plasma
planar
plasma
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP56123139A
Other languages
English (en)
Inventor
Zajiyatsuku Jiyon
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Eaton Corp
Original Assignee
Eaton Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Eaton Corp filed Critical Eaton Corp
Publication of JPS5758322A publication Critical patent/JPS5758322A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32541—Shape

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
JP56123139A 1980-08-11 1981-08-07 Planar plasma etching device Pending JPS5758322A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/176,875 US4342901A (en) 1980-08-11 1980-08-11 Plasma etching electrode

Publications (1)

Publication Number Publication Date
JPS5758322A true JPS5758322A (en) 1982-04-08

Family

ID=22646235

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56123139A Pending JPS5758322A (en) 1980-08-11 1981-08-07 Planar plasma etching device

Country Status (3)

Country Link
US (1) US4342901A (ja)
EP (1) EP0045858A3 (ja)
JP (1) JPS5758322A (ja)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59217330A (ja) * 1983-05-26 1984-12-07 Toshiba Corp 反応性イオンエツチング装置
JPS6173331A (ja) * 1984-09-17 1986-04-15 Mitsubishi Electric Corp ドライエツチング装置
JPH0620976A (ja) * 1983-08-08 1994-01-28 Semiconductor Energy Lab Co Ltd プラズマ気相反応装置およびプラズマ気相反応方法
JP2007505450A (ja) * 2003-09-10 2007-03-08 ユナキス・バルツェルス・アクチェンゲゼルシャフト 長方形状大面積基板処理用の高周波プラズマ反応器のための電圧不均一性補償方法
JP2014241394A (ja) * 2013-05-17 2014-12-25 キヤノンアネルバ株式会社 エッチング装置

Families Citing this family (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4416760A (en) * 1981-11-27 1983-11-22 Varian Associates, Inc. Apparatus for asymmetrically contouring the thickness of sputter coated layers
JPS58157975A (ja) * 1982-03-10 1983-09-20 Tokyo Ohka Kogyo Co Ltd プラズマエツチング方法
US4585920A (en) * 1982-05-21 1986-04-29 Tegal Corporation Plasma reactor removable insert
CA1281439C (en) * 1985-02-05 1991-03-12 James F. Battey Plasma reactor and method for removing photoresist
GB8512455D0 (en) * 1985-05-16 1985-06-19 Atomic Energy Authority Uk Coating apparatus
US4673456A (en) * 1985-09-17 1987-06-16 Machine Technology, Inc. Microwave apparatus for generating plasma afterglows
DE3606959A1 (de) * 1986-03-04 1987-09-10 Leybold Heraeus Gmbh & Co Kg Vorrichtung zur plasmabehandlung von substraten in einer durch hochfrequenz angeregten plasmaentladung
US4736087A (en) * 1987-01-12 1988-04-05 Olin Corporation Plasma stripper with multiple contact point cathode
EP0353719A3 (de) * 1988-08-05 1991-04-10 Siemens Aktiengesellschaft Metallkontakt mit überhängenden Kanten und Herstellungsverfahren
DE4025396A1 (de) * 1990-08-10 1992-02-13 Leybold Ag Einrichtung fuer die herstellung eines plasmas
CH686254A5 (de) * 1992-07-27 1996-02-15 Balzers Hochvakuum Verfahren zur Einstellung der Bearbeitungsratenverteilung sowie Aetz- oder Plasma-CVD-Anlage zu dessen Ausfuehrung.
US5439524A (en) * 1993-04-05 1995-08-08 Vlsi Technology, Inc. Plasma processing apparatus
US5391281A (en) * 1993-04-09 1995-02-21 Materials Research Corp. Plasma shaping plug for control of sputter etching
US5628869A (en) * 1994-05-09 1997-05-13 Lsi Logic Corporation Plasma enhanced chemical vapor reactor with shaped electrodes
US5597439A (en) * 1994-10-26 1997-01-28 Applied Materials, Inc. Process gas inlet and distribution passages
US5716485A (en) * 1995-06-07 1998-02-10 Varian Associates, Inc. Electrode designs for controlling uniformity profiles in plasma processing reactors
JP2001267305A (ja) * 2000-03-17 2001-09-28 Hitachi Ltd プラズマ処理装置
WO2001088966A2 (en) * 2000-05-12 2001-11-22 Tokyo Electron Limited Method of adjusting the thickness of an electrode in a plasma processing system
WO2002101116A1 (en) * 2001-06-07 2002-12-19 Tokyo Electron Limited Method of and apparatus for tailoring an etch profile
US20050059250A1 (en) * 2001-06-21 2005-03-17 Savas Stephen Edward Fast etching system and process for organic materials
US6838387B1 (en) 2001-06-21 2005-01-04 John Zajac Fast etching system and process
US20060191637A1 (en) * 2001-06-21 2006-08-31 John Zajac Etching Apparatus and Process with Thickness and Uniformity Control
US7316761B2 (en) * 2003-02-03 2008-01-08 Applied Materials, Inc. Apparatus for uniformly etching a dielectric layer
US8158016B2 (en) * 2004-02-04 2012-04-17 Veeco Instruments, Inc. Methods of operating an electromagnet of an ion source
US7557362B2 (en) * 2004-02-04 2009-07-07 Veeco Instruments Inc. Ion sources and methods for generating an ion beam with a controllable ion current density distribution
KR20050013734A (ko) * 2003-07-29 2005-02-05 삼성전자주식회사 플라즈마 식각장치
FR2884044A1 (fr) * 2005-04-01 2006-10-06 St Microelectronics Sa Reacteur de depot et procede de determination de son diffuseur
TWI556309B (zh) 2009-06-19 2016-11-01 半導體能源研究所股份有限公司 電漿處理裝置，形成膜的方法，和薄膜電晶體的製造方法
TWI610329B (zh) * 2016-11-08 2018-01-01 財團法人工業技術研究院 電漿處理裝置

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IT1203089B (it) * 1976-03-03 1989-02-15 Int Plasma Corp Procedimento ed apparecchiatura per eseguire reazioni chimiche nella regione della scarica luminescente di un plasma
GB1544172A (en) * 1976-03-03 1979-04-11 Int Plasma Corp Gas plasma reactor and process
US4158589A (en) * 1977-12-30 1979-06-19 International Business Machines Corporation Negative ion extractor for a plasma etching apparatus
US4230515A (en) * 1978-07-27 1980-10-28 Davis & Wilder, Inc. Plasma etching apparatus
US4209357A (en) * 1979-05-18 1980-06-24 Tegal Corporation Plasma reactor apparatus
US4297162A (en) * 1979-10-17 1981-10-27 Texas Instruments Incorporated Plasma etching using improved electrode
JPS5669374A (en) * 1979-11-09 1981-06-10 Chiyou Lsi Gijutsu Kenkyu Kumiai Dry etching method

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59217330A (ja) * 1983-05-26 1984-12-07 Toshiba Corp 反応性イオンエツチング装置
JPH0620976A (ja) * 1983-08-08 1994-01-28 Semiconductor Energy Lab Co Ltd プラズマ気相反応装置およびプラズマ気相反応方法
JP2564748B2 (ja) * 1983-08-08 1996-12-18 株式会社 半導体エネルギー研究所 プラズマ気相反応装置およびプラズマ気相反応方法
JPS6173331A (ja) * 1984-09-17 1986-04-15 Mitsubishi Electric Corp ドライエツチング装置
JP2007505450A (ja) * 2003-09-10 2007-03-08 ユナキス・バルツェルス・アクチェンゲゼルシャフト 長方形状大面積基板処理用の高周波プラズマ反応器のための電圧不均一性補償方法
JP4710020B2 (ja) * 2003-09-10 2011-06-29 エリコン・ソーラー・アクチェンゲゼルシャフト，トリュープバッハ 真空処理装置およびそれを用いた処理方法
JP2014241394A (ja) * 2013-05-17 2014-12-25 キヤノンアネルバ株式会社 エッチング装置

Also Published As

Publication number Publication date
EP0045858A3 (en) 1983-01-12
EP0045858A2 (en) 1982-02-17
US4342901A (en) 1982-08-03

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