JPS5756928A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5756928A
JPS5756928A JP13060480A JP13060480A JPS5756928A JP S5756928 A JPS5756928 A JP S5756928A JP 13060480 A JP13060480 A JP 13060480A JP 13060480 A JP13060480 A JP 13060480A JP S5756928 A JPS5756928 A JP S5756928A
Authority
JP
Japan
Prior art keywords
amorphous
polysilicon
manufacture
semiconductor device
convert
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP13060480A
Other languages
Japanese (ja)
Inventor
Koichi Sakamoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Oki Electric Industry Co Ltd
Original Assignee
Oki Electric Industry Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oki Electric Industry Co Ltd filed Critical Oki Electric Industry Co Ltd
Priority to JP13060480A priority Critical patent/JPS5756928A/en
Publication of JPS5756928A publication Critical patent/JPS5756928A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0042—Photosensitive materials with inorganic or organometallic light-sensitive compounds not otherwise provided for, e.g. inorganic resists
    • G03F7/0043—Chalcogenides; Silicon, germanium, arsenic or derivatives thereof; Metals, oxides or alloys thereof

Landscapes

  • Engineering & Computer Science (AREA)
  • Metallurgy (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Recrystallisation Techniques (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

PURPOSE:To form polysilicon on a selective region simply and accurately by accumulating amorphous Si on an SiO2 film, emitting laser or electron beam thereto to convert it selectively into polysilicon and removing the amorphous Si. CONSTITUTION:An amorphous Si 13 is accumulated on an SiO2 film 12 on Si substrate 11, a laser 15 is emitted to selectively convert the region 14 to polysilicon. When amorphous Si 13' is etched in nonemitted resion, a polysilicon layer 14 is retained due to the difference of etching speeds therebetween.
JP13060480A 1980-09-22 1980-09-22 Manufacture of semiconductor device Pending JPS5756928A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13060480A JPS5756928A (en) 1980-09-22 1980-09-22 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13060480A JPS5756928A (en) 1980-09-22 1980-09-22 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS5756928A true JPS5756928A (en) 1982-04-05

Family

ID=15038176

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13060480A Pending JPS5756928A (en) 1980-09-22 1980-09-22 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5756928A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61154024A (en) * 1984-12-26 1986-07-12 Nec Corp Manufacture of semiconductor element
JPS61271827A (en) * 1985-05-27 1986-12-02 Fujitsu Ltd Manufacture of semiconductor device
JPH01300513A (en) * 1988-05-28 1989-12-05 Kouenerugii Butsurigaku Kenkyu Shocho Formation of crystal growth nucleus or etching nucleus using photon
JPH0288632A (en) * 1988-08-05 1990-03-28 E I Du Pont De Nemours & Co Thermoplastic copolyether-ester elastomer

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61154024A (en) * 1984-12-26 1986-07-12 Nec Corp Manufacture of semiconductor element
JPS61271827A (en) * 1985-05-27 1986-12-02 Fujitsu Ltd Manufacture of semiconductor device
JPH01300513A (en) * 1988-05-28 1989-12-05 Kouenerugii Butsurigaku Kenkyu Shocho Formation of crystal growth nucleus or etching nucleus using photon
JPH0288632A (en) * 1988-08-05 1990-03-28 E I Du Pont De Nemours & Co Thermoplastic copolyether-ester elastomer

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