JPS5754360A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS5754360A JPS5754360A JP12950480A JP12950480A JPS5754360A JP S5754360 A JPS5754360 A JP S5754360A JP 12950480 A JP12950480 A JP 12950480A JP 12950480 A JP12950480 A JP 12950480A JP S5754360 A JPS5754360 A JP S5754360A
- Authority
- JP
- Japan
- Prior art keywords
- film
- section
- oxide film
- polycrystalline
- boron
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 238000004519 manufacturing process Methods 0.000 title 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 3
- 239000000758 substrate Substances 0.000 abstract 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 abstract 2
- 229910052796 boron Inorganic materials 0.000 abstract 2
- 229910052681 coesite Inorganic materials 0.000 abstract 2
- 229910052906 cristobalite Inorganic materials 0.000 abstract 2
- 239000012535 impurity Substances 0.000 abstract 2
- 238000000034 method Methods 0.000 abstract 2
- 238000005121 nitriding Methods 0.000 abstract 2
- 239000000377 silicon dioxide Substances 0.000 abstract 2
- 235000012239 silicon dioxide Nutrition 0.000 abstract 2
- 229910052682 stishovite Inorganic materials 0.000 abstract 2
- 229910052905 tridymite Inorganic materials 0.000 abstract 2
- 239000011248 coating agent Substances 0.000 abstract 1
- 238000000576 coating method Methods 0.000 abstract 1
- 238000010438 heat treatment Methods 0.000 abstract 1
- 238000000059 patterning Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
- H01L27/0705—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type
- H01L27/0727—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with diodes, or capacitors or resistors
- H01L27/0733—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with diodes, or capacitors or resistors in combination with capacitors only
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Semiconductor Integrated Circuits (AREA)
Abstract
PURPOSE:To reduce the dependency for applied voltage as well as to obtain the accurate capacity value for the subject semiconductor device by a method wherein, after an SiO2 film having an accurate thickness has been formed on a low density P type Si substrate, a boron-doped polycrystalline Si is coated and the impurity concentration on the substrate surface is increased through the intermediary of the SiO2 film. CONSTITUTION:A field oxide film 2 of 8,000Angstrom thickness, an N-channel MOSFET section oxide film 3 of 800Angstrom thicness and an MOS structure capacity section oxide film 4 are formed on the P type Si substrate 1 having the impurity density of 10<15>cm<-3>.Then, source and drain regions 7 and 7' of an FET section are formed by coating and patterning a polycrystalline Si layer 5 and a nitriding Si film 6. Subsequently, the surfaces of the regions 7 and 7' is covered by an oxide film 8 and after the nitriding film 6 has been removed, boron is doped on the polycrystalline Si layer 5. Then, a heat treatment is performed and the concentration of the Si surface is increased to 10<18>cm<-3>by doping boron on the Si surfaces 12 and 13 on the gate section of the MOS structure capacity section FET through the intermediary of the oxide films 3 and 4. Through these procedures, an MOS type element, having least applied voltage dependency and accurate capacity value, can be obtained.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12950480A JPS5754360A (en) | 1980-09-18 | 1980-09-18 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12950480A JPS5754360A (en) | 1980-09-18 | 1980-09-18 | Manufacture of semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5754360A true JPS5754360A (en) | 1982-03-31 |
| JPH0322061B2 JPH0322061B2 (en) | 1991-03-26 |
Family
ID=15011114
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12950480A Granted JPS5754360A (en) | 1980-09-18 | 1980-09-18 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5754360A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5954257A (en) * | 1982-09-22 | 1984-03-29 | Nippon Denso Co Ltd | Semiconductor device |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS50159284A (en) * | 1974-06-12 | 1975-12-23 |
-
1980
- 1980-09-18 JP JP12950480A patent/JPS5754360A/en active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS50159284A (en) * | 1974-06-12 | 1975-12-23 |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5954257A (en) * | 1982-09-22 | 1984-03-29 | Nippon Denso Co Ltd | Semiconductor device |
| JPH0366815B2 (en) * | 1982-09-22 | 1991-10-18 | Nippon Denso Co |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0322061B2 (en) | 1991-03-26 |
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