JPS5753932A - - Google Patents

Info

Publication number
JPS5753932A
JPS5753932A JP56122353A JP12235381A JPS5753932A JP S5753932 A JPS5753932 A JP S5753932A JP 56122353 A JP56122353 A JP 56122353A JP 12235381 A JP12235381 A JP 12235381A JP S5753932 A JPS5753932 A JP S5753932A
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56122353A
Other languages
Japanese (ja)
Other versions
JPH0258787B2 (OSRAM
Inventor
Ee Kotsukuramu Chaaruzu
Kee Chia Joan
Efu Kuraidaa Jeimuzu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Raytheon Co
Original Assignee
Santa Barbara Research Center
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Santa Barbara Research Center filed Critical Santa Barbara Research Center
Publication of JPS5753932A publication Critical patent/JPS5753932A/ja
Publication of JPH0258787B2 publication Critical patent/JPH0258787B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6938—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides
    • H10P14/6939—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides characterised by the metal
    • H10P14/69394—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides characterised by the metal the material containing titanium, e.g. TiO2
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/011—Manufacture or treatment of electrodes ohmically coupled to a semiconductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/011—Manufacture or treatment of electrodes ohmically coupled to a semiconductor
    • H10D64/0116—Manufacture or treatment of electrodes ohmically coupled to a semiconductor to Group III-V semiconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/62—Electrodes ohmically coupled to a semiconductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6304—Formation by oxidation, e.g. oxidation of the substrate
    • H10P14/6314—Formation by oxidation, e.g. oxidation of the substrate of a metallic layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6324—Formation by anodic treatments, e.g. anodic oxidation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/41—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
    • H10W20/44—Conductive materials thereof
    • H10W20/4403—Conductive materials thereof based on metals, e.g. alloys, metal silicides

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Formation Of Insulating Films (AREA)
  • Light Receiving Elements (AREA)
JP56122353A 1980-08-04 1981-08-04 Expired - Lifetime JPH0258787B2 (OSRAM)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US17496380A 1980-08-04 1980-08-04

Publications (2)

Publication Number Publication Date
JPS5753932A true JPS5753932A (OSRAM) 1982-03-31
JPH0258787B2 JPH0258787B2 (OSRAM) 1990-12-10

Family

ID=22638251

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56122353A Expired - Lifetime JPH0258787B2 (OSRAM) 1980-08-04 1981-08-04

Country Status (3)

Country Link
EP (1) EP0045644B1 (OSRAM)
JP (1) JPH0258787B2 (OSRAM)
DE (1) DE3176025D1 (OSRAM)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5954228A (ja) * 1982-09-22 1984-03-29 Toshiba Corp 化合物半導体の陽極酸化装置
JPS60249337A (ja) * 1984-05-24 1985-12-10 Fujitsu Ltd 半導体装置の製造方法
JP2009206357A (ja) * 2008-02-28 2009-09-10 Asahi Kasei Electronics Co Ltd 化合物半導体装置及び化合物半導体装置の製造方法

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6467964A (en) * 1987-09-08 1989-03-14 Mitsubishi Electric Corp Multilayer electrode structure
JP3278951B2 (ja) * 1992-10-23 2002-04-30 ソニー株式会社 オーミック電極の形成方法
TWI693642B (zh) * 2017-12-22 2020-05-11 美商雷森公司 用於控制具有將由設置在半導體上的結構所吸收的預定波長之輻射量的方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5141473A (en) * 1974-10-01 1976-04-07 Berumanto Futsuzu Nv Merengeseihin oyobi sonoruijibutsu

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1469953A (en) * 1973-05-18 1977-04-14 Philips Electronic Associated Semiconductor devices
US4000508A (en) * 1975-07-17 1976-12-28 Honeywell Inc. Ohmic contacts to p-type mercury cadmium telluride

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5141473A (en) * 1974-10-01 1976-04-07 Berumanto Futsuzu Nv Merengeseihin oyobi sonoruijibutsu

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5954228A (ja) * 1982-09-22 1984-03-29 Toshiba Corp 化合物半導体の陽極酸化装置
JPS60249337A (ja) * 1984-05-24 1985-12-10 Fujitsu Ltd 半導体装置の製造方法
JP2009206357A (ja) * 2008-02-28 2009-09-10 Asahi Kasei Electronics Co Ltd 化合物半導体装置及び化合物半導体装置の製造方法

Also Published As

Publication number Publication date
EP0045644B1 (en) 1987-03-18
EP0045644A3 (en) 1984-02-08
JPH0258787B2 (OSRAM) 1990-12-10
EP0045644A2 (en) 1982-02-10
DE3176025D1 (en) 1987-04-23

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