JPS5752171A - Electrically changeable non-volatile semiconductor memory cell - Google Patents

Electrically changeable non-volatile semiconductor memory cell

Info

Publication number
JPS5752171A
JPS5752171A JP56084522A JP8452281A JPS5752171A JP S5752171 A JPS5752171 A JP S5752171A JP 56084522 A JP56084522 A JP 56084522A JP 8452281 A JP8452281 A JP 8452281A JP S5752171 A JPS5752171 A JP S5752171A
Authority
JP
Japan
Prior art keywords
memory cell
semiconductor memory
volatile semiconductor
electrically changeable
changeable non
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP56084522A
Other languages
English (en)
Japanese (ja)
Inventor
Mitsukori Furanko
Koruda Jiyuzetsupe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SRL
Original Assignee
ATES Componenti Elettronici SpA
SGS ATES Componenti Elettronici SpA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ATES Componenti Elettronici SpA, SGS ATES Componenti Elettronici SpA filed Critical ATES Componenti Elettronici SpA
Publication of JPS5752171A publication Critical patent/JPS5752171A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/149—Source or drain regions of field-effect devices
    • H10D62/151—Source or drain regions of field-effect devices of IGFETs 
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
    • G11C16/0425—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a merged floating gate and select transistor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/266—Bombardment with radiation with high-energy radiation producing ion implantation using masks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0411—Manufacture or treatment of FETs having insulated gates [IGFET] of FETs having floating gates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/68—Floating-gate IGFETs
    • H10D30/681—Floating-gate IGFETs having only two programming levels
    • H10D30/684—Floating-gate IGFETs having only two programming levels programmed by hot carrier injection
    • H10D30/685—Floating-gate IGFETs having only two programming levels programmed by hot carrier injection from the channel
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/031—Manufacture or treatment of data-storage electrodes
    • H10D64/035—Manufacture or treatment of data-storage electrodes comprising conductor-insulator-conductor-insulator-semiconductor structures

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Toxicology (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Health & Medical Sciences (AREA)
  • Power Engineering (AREA)
  • Non-Volatile Memory (AREA)
  • Semiconductor Memories (AREA)
JP56084522A 1980-06-04 1981-06-03 Electrically changeable non-volatile semiconductor memory cell Pending JPS5752171A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT8022538A IT1209227B (it) 1980-06-04 1980-06-04 Cella di memoria non volatile a 'gate' flottante elettricamente alterabile.

Publications (1)

Publication Number Publication Date
JPS5752171A true JPS5752171A (en) 1982-03-27

Family

ID=11197578

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56084522A Pending JPS5752171A (en) 1980-06-04 1981-06-03 Electrically changeable non-volatile semiconductor memory cell

Country Status (6)

Country Link
US (1) US4412311A (en, 2012)
JP (1) JPS5752171A (en, 2012)
DE (1) DE3121753A1 (en, 2012)
FR (1) FR2484124A1 (en, 2012)
GB (1) GB2077492B (en, 2012)
IT (1) IT1209227B (en, 2012)

Families Citing this family (42)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5864068A (ja) * 1981-10-14 1983-04-16 Agency Of Ind Science & Technol 不揮発性半導体メモリの書き込み方法
DE3141390A1 (de) * 1981-10-19 1983-04-28 Deutsche Itt Industries Gmbh, 7800 Freiburg Floating-gate-speicherzelle, bei der das schreiben und loeschen durch injektion heisser ladungstraeger erfolgt
DE3482847D1 (de) * 1983-04-18 1990-09-06 Toshiba Kawasaki Kk Halbleiterspeichervorrichtung mit einem schwebenden gate.
JPS6038799A (ja) * 1983-08-11 1985-02-28 Seiko Instr & Electronics Ltd 半導体不揮発性メモリ用読み出し回路
JPS60182174A (ja) * 1984-02-28 1985-09-17 Nec Corp 不揮発性半導体メモリ
US4868629A (en) * 1984-05-15 1989-09-19 Waferscale Integration, Inc. Self-aligned split gate EPROM
US4639893A (en) * 1984-05-15 1987-01-27 Wafer Scale Integration, Inc. Self-aligned split gate EPROM
US4795719A (en) * 1984-05-15 1989-01-03 Waferscale Integration, Inc. Self-aligned split gate eprom process
JPH0760864B2 (ja) * 1984-07-13 1995-06-28 株式会社日立製作所 半導体集積回路装置
US4599706A (en) * 1985-05-14 1986-07-08 Xicor, Inc. Nonvolatile electrically alterable memory
US4939558A (en) * 1985-09-27 1990-07-03 Texas Instruments Incorporated EEPROM memory cell and driving circuitry
US4783766A (en) * 1986-05-30 1988-11-08 Seeq Technology, Inc. Block electrically erasable EEPROM
US4949140A (en) * 1987-02-02 1990-08-14 Intel Corporation EEPROM cell with integral select transistor
GB2200795B (en) * 1987-02-02 1990-10-03 Intel Corp Eprom cell with integral select transistor
US4814286A (en) * 1987-02-02 1989-03-21 Intel Corporation EEPROM cell with integral select transistor
US5066995A (en) * 1987-03-13 1991-11-19 Harris Corporation Double level conductor structure
US5095344A (en) * 1988-06-08 1992-03-10 Eliyahou Harari Highly compact eprom and flash eeprom devices
US5268318A (en) * 1988-06-08 1993-12-07 Eliyahou Harari Highly compact EPROM and flash EEPROM devices
US5268319A (en) * 1988-06-08 1993-12-07 Eliyahou Harari Highly compact EPROM and flash EEPROM devices
US5168465A (en) * 1988-06-08 1992-12-01 Eliyahou Harari Highly compact EPROM and flash EEPROM devices
KR910007434B1 (ko) * 1988-12-15 1991-09-26 삼성전자 주식회사 전기적으로 소거 및 프로그램 가능한 반도체 메모리장치 및 그 소거 및 프로그램 방법
EP0464196B1 (en) * 1990-01-22 2002-05-08 Silicon Storage Technology, Inc. Single transistor non-volatile electrically alterable semiconductor memory device with a re-crystallized floating gate
US5045488A (en) * 1990-01-22 1991-09-03 Silicon Storage Technology, Inc. Method of manufacturing a single transistor non-volatile, electrically alterable semiconductor memory device
JPH0424969A (ja) * 1990-05-15 1992-01-28 Toshiba Corp 半導体記憶装置
JPH04289593A (ja) * 1991-03-19 1992-10-14 Fujitsu Ltd 不揮発性半導体記憶装置
US5317179A (en) * 1991-09-23 1994-05-31 Integrated Silicon Solution, Inc. Non-volatile semiconductor memory cell
FR2683664A1 (fr) * 1991-11-13 1993-05-14 Sgs Thomson Microelectronics Memoire integree electriquement programmable a un seuil transistor.
JPH0745730A (ja) * 1993-02-19 1995-02-14 Sgs Thomson Microelettronica Spa ２レベルのポリシリコンｅｅｐｒｏｍメモリ・セル並びにそのプログラミング方法及び製造方法、集積されたｅｅｐｒｏｍ記憶回路、ｅｅｐｒｏｍメモリ・セル及びそのプログラミング方法
US5640031A (en) * 1993-09-30 1997-06-17 Keshtbod; Parviz Spacer flash cell process
US5479368A (en) * 1993-09-30 1995-12-26 Cirrus Logic, Inc. Spacer flash cell device with vertically oriented floating gate
US5455791A (en) * 1994-06-01 1995-10-03 Zaleski; Andrzei Method for erasing data in EEPROM devices on SOI substrates and device therefor
US5455792A (en) * 1994-09-09 1995-10-03 Yi; Yong-Wan Flash EEPROM devices employing mid channel injection
EP1096572B8 (en) * 1999-10-25 2009-09-02 Imec Electrically programmable and erasable memory device and method of operating same
JP5581215B2 (ja) * 2007-11-01 2014-08-27 インヴェンサス・コーポレイション 不揮発性ワンタイムプログラマブル及びマルチタイムプログラマブルメモリに組み込まれた集積回路
US8580622B2 (en) * 2007-11-14 2013-11-12 Invensas Corporation Method of making integrated circuit embedded with non-volatile programmable memory having variable coupling
US7852672B2 (en) * 2007-11-14 2010-12-14 Jonker Llc Integrated circuit embedded with non-volatile programmable memory having variable coupling
US7787295B2 (en) * 2007-11-14 2010-08-31 Jonker Llc Integrated circuit embedded with non-volatile multiple-time programmable memory having variable coupling
US7876615B2 (en) * 2007-11-14 2011-01-25 Jonker Llc Method of operating integrated circuit embedded with non-volatile programmable memory having variable coupling related application data
US8305805B2 (en) * 2008-11-03 2012-11-06 Invensas Corporation Common drain non-volatile multiple-time programmable memory
US8203861B2 (en) 2008-12-30 2012-06-19 Invensas Corporation Non-volatile one-time—programmable and multiple-time programmable memory configuration circuit
US8988103B2 (en) 2010-09-15 2015-03-24 David K. Y. Liu Capacitively coupled logic gate
WO2012154973A1 (en) 2011-05-10 2012-11-15 Jonker, Llc Zero cost nvm cell using high voltage devices in analog process

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4087795A (en) * 1974-09-20 1978-05-02 Siemens Aktiengesellschaft Memory field effect storage device
US4132904A (en) * 1977-07-28 1979-01-02 Hughes Aircraft Company Volatile/non-volatile logic latch circuit
JPS5519851A (en) * 1978-07-31 1980-02-12 Hitachi Ltd Manufacture of non-volatile memories
JPS5552592A (en) * 1978-10-13 1980-04-17 Sanyo Electric Co Ltd Data writing method and field effect transistor used for fulfillment
US4300212A (en) * 1979-01-24 1981-11-10 Xicor, Inc. Nonvolatile static random access memory devices
US4257056A (en) * 1979-06-27 1981-03-17 National Semiconductor Corporation Electrically erasable read only memory
US4328565A (en) * 1980-04-07 1982-05-04 Eliyahou Harari Non-volatile eprom with increased efficiency
US4375087C1 (en) * 1980-04-09 2002-01-01 Hughes Aircraft Co Electrically erasable programmable read-only memory

Also Published As

Publication number Publication date
IT1209227B (it) 1989-07-16
DE3121753C2 (en, 2012) 1988-10-20
FR2484124B1 (en, 2012) 1985-03-22
IT8022538A0 (it) 1980-06-04
US4412311A (en) 1983-10-25
DE3121753A1 (de) 1982-06-03
GB2077492A (en) 1981-12-16
GB2077492B (en) 1984-01-25
FR2484124A1 (fr) 1981-12-11

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