JPS5751981B2 - - Google Patents

Info

Publication number
JPS5751981B2
JPS5751981B2 JP52066648A JP6664877A JPS5751981B2 JP S5751981 B2 JPS5751981 B2 JP S5751981B2 JP 52066648 A JP52066648 A JP 52066648A JP 6664877 A JP6664877 A JP 6664877A JP S5751981 B2 JPS5751981 B2 JP S5751981B2
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP52066648A
Other languages
Japanese (ja)
Other versions
JPS542077A (en
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP6664877A priority Critical patent/JPS542077A/ja
Priority to US05/911,311 priority patent/US4223328A/en
Priority to DE2824133A priority patent/DE2824133C2/de
Priority to FR787817031A priority patent/FR2394175A1/fr
Publication of JPS542077A publication Critical patent/JPS542077A/ja
Publication of JPS5751981B2 publication Critical patent/JPS5751981B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/744—Gate-turn-off devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/083—Anode or cathode regions of thyristors or gated bipolar-mode devices
    • H01L29/0834—Anode regions of thyristors or gated bipolar-mode devices, e.g. supplementary regions surrounding anode regions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1066—Gate region of field-effect devices with PN junction gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
    • H01L29/167—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table further characterised by the doping material

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thyristors (AREA)
  • Junction Field-Effect Transistors (AREA)
JP6664877A 1977-06-08 1977-06-08 Semiconductor switching element Granted JPS542077A (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP6664877A JPS542077A (en) 1977-06-08 1977-06-08 Semiconductor switching element
US05/911,311 US4223328A (en) 1977-06-08 1978-06-01 Field controlled thyristor with dual resistivity field layer
DE2824133A DE2824133C2 (de) 1977-06-08 1978-06-01 Feldgesteuerter Thyristor
FR787817031A FR2394175A1 (fr) 1977-06-08 1978-06-07 Thyristor a effet de champ

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6664877A JPS542077A (en) 1977-06-08 1977-06-08 Semiconductor switching element

Publications (2)

Publication Number Publication Date
JPS542077A JPS542077A (en) 1979-01-09
JPS5751981B2 true JPS5751981B2 (US08188275-20120529-C00054.png) 1982-11-05

Family

ID=13321919

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6664877A Granted JPS542077A (en) 1977-06-08 1977-06-08 Semiconductor switching element

Country Status (4)

Country Link
US (1) US4223328A (US08188275-20120529-C00054.png)
JP (1) JPS542077A (US08188275-20120529-C00054.png)
DE (1) DE2824133C2 (US08188275-20120529-C00054.png)
FR (1) FR2394175A1 (US08188275-20120529-C00054.png)

Families Citing this family (48)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4364072A (en) * 1978-03-17 1982-12-14 Zaidan Hojin Handotai Kenkyu Shinkokai Static induction type semiconductor device with multiple doped layers for potential modification
US4514747A (en) * 1978-08-07 1985-04-30 Hitachi, Ltd. Field controlled thyristor with double-diffused source region
JPS6046551B2 (ja) * 1978-08-07 1985-10-16 株式会社日立製作所 半導体スイツチング素子およびその製法
JPS55105457U (US08188275-20120529-C00054.png) * 1979-01-16 1980-07-23
JPS6016753B2 (ja) * 1979-01-19 1985-04-27 株式会社日立製作所 半導体スイツチング素子およびその制御方法
DE3051162C2 (de) * 1979-01-26 1995-02-09 Zaidan Hojin Handotai Kenkyu Statischer Induktionsthyristor
JPS5599774A (en) * 1979-01-26 1980-07-30 Semiconductor Res Found Electrostatic induction type thyristor
JPS55128870A (en) * 1979-03-26 1980-10-06 Semiconductor Res Found Electrostatic induction thyristor and semiconductor device
EP0029932B1 (en) * 1979-11-16 1984-08-15 General Electric Company Asymmetrical field controlled thyristor
US4937644A (en) * 1979-11-16 1990-06-26 General Electric Company Asymmetrical field controlled thyristor
JPS5676574A (en) * 1979-11-26 1981-06-24 Semiconductor Res Found Schottky injection electrode type semiconductor device
JPS5824018B2 (ja) * 1979-12-21 1983-05-18 富士通株式会社 バイポ−ラｉｃの製造方法
FR2480501A1 (fr) * 1980-04-14 1981-10-16 Thomson Csf Dispositif semi-conducteur a grille profonde accessible par la surface et procede de fabrication
FR2480502A1 (fr) * 1980-04-14 1981-10-16 Thomson Csf Dispositif semi-conducteur a grille profonde, son application a une diode blocable, et procede de fabrication
DE3024015A1 (de) * 1980-06-26 1982-01-07 Siemens AG, 1000 Berlin und 8000 München Steuerbarer halbleiterschalter
JPS5778173A (en) * 1980-11-04 1982-05-15 Hitachi Ltd Semiconductor device and manufacture thereof
JPS5788771A (en) * 1980-11-21 1982-06-02 Semiconductor Res Found Electrostatic induction thyristor
JPS57117276A (en) * 1981-01-14 1982-07-21 Hitachi Ltd Semiconductor device
US4454523A (en) * 1981-03-30 1984-06-12 Siliconix Incorporated High voltage field effect transistor
JPS5850775A (ja) * 1981-09-19 1983-03-25 Mitsubishi Electric Corp 静電誘導型サイリスタ
US4782379A (en) * 1981-11-23 1988-11-01 General Electric Company Semiconductor device having rapid removal of majority carriers from an active base region thereof at device turn-off and method of fabricating this device
US4751556A (en) * 1984-03-29 1988-06-14 Gte Laboratories Incorporated Junction field effect transistor
JPH0682833B2 (ja) * 1985-02-08 1994-10-19 株式会社東芝 サイリスタの製造方法
US4757025A (en) * 1985-03-25 1988-07-12 Motorola Inc. Method of making gate turn off switch with anode short and buried base
JPS624368A (ja) * 1985-06-28 1987-01-10 シ−メンス、アクチエンゲゼルシヤフト サイリスタ
DE3531631A1 (de) * 1985-09-05 1987-03-05 Licentia Gmbh Asymmetrischer thyristor und verfahren zu seiner herstellung
US4752818A (en) * 1985-09-28 1988-06-21 Kabushiki Kaisha Toyota Chuo Kenkyusho Semiconductor device with multiple recombination center layers
DE3686027D1 (de) * 1985-11-29 1992-08-20 Bbc Brown Boveri & Cie Rueckwaertsleitender thyristor.
EP0230278A3 (de) * 1986-01-24 1989-09-06 Siemens Aktiengesellschaft Thyristor mit integrierter Stromversorgung für eine zugeordnete Schaltungseinheit und Verfahren zu seiner Herstellung
JPS62189781A (ja) * 1986-02-17 1987-08-19 Kokuritsu Kogai Kenkyusho レ−ザ−共振器
US4982258A (en) * 1988-05-02 1991-01-01 General Electric Company Metal oxide semiconductor gated turn-off thyristor including a low lifetime region
US4963950A (en) * 1988-05-02 1990-10-16 General Electric Company Metal oxide semiconductor gated turn-off thyristor having an interleaved structure
US5192696A (en) * 1992-01-15 1993-03-09 Gte Laboratories Incorporated Field effect transistor and method of fabricating
US5466951A (en) * 1993-12-08 1995-11-14 Siemens Aktiengesellschaft Controllable power semiconductor element with buffer zone and method for the manufacture thereof
SE9601172D0 (sv) * 1996-03-27 1996-03-27 Abb Research Ltd Insulated gate bipolar transistor having a trench and a method for procuction thereof
US5880513A (en) * 1996-04-18 1999-03-09 Harris Corporation Asymmetric snubber resistor
US5909039A (en) * 1996-04-24 1999-06-01 Abb Research Ltd. Insulated gate bipolar transistor having a trench
US6011279A (en) * 1997-04-30 2000-01-04 Cree Research, Inc. Silicon carbide field controlled bipolar switch
DE19837944A1 (de) * 1998-08-21 2000-02-24 Asea Brown Boveri Verfahren zur Fertigung eines Halbleiterbauelements
US7485920B2 (en) * 2000-06-14 2009-02-03 International Rectifier Corporation Process to create buried heavy metal at selected depth
JP2002184952A (ja) * 2000-12-15 2002-06-28 Shindengen Electric Mfg Co Ltd 半導体装置、半導体装置の製造方法
JP4458740B2 (ja) * 2002-09-13 2010-04-28 株式会社アルバック バイアススパッタ成膜方法及びバイアススパッタ成膜装置
EP1597772B1 (en) * 2003-02-18 2008-12-24 Nxp B.V. Semiconductor device and method of manufacturing such a device
US7038260B1 (en) * 2003-03-04 2006-05-02 Lovoltech, Incorporated Dual gate structure for a FET and method for fabricating same
US7750426B2 (en) 2007-05-30 2010-07-06 Intersil Americas, Inc. Junction barrier Schottky diode with dual silicides
US8368166B2 (en) * 2007-05-30 2013-02-05 Intersil Americas Inc. Junction barrier Schottky diode
JP2013149956A (ja) * 2011-12-22 2013-08-01 Ngk Insulators Ltd 半導体装置
JP5820311B2 (ja) * 2012-03-02 2015-11-24 ルネサスエレクトロニクス株式会社 半導体装置

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS538578A (en) * 1976-06-21 1978-01-26 Gen Electric Field controlled thyristor

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3553536A (en) * 1968-11-19 1971-01-05 Rca Corp Semiconductor rectifiers having controlled storage and recovery characteristics
US4037245A (en) * 1975-11-28 1977-07-19 General Electric Company Electric field controlled diode with a current controlling surface grid
JPS5290273A (en) * 1976-01-23 1977-07-29 Hitachi Ltd Semiconductor device
US4132996A (en) * 1976-11-08 1979-01-02 General Electric Company Electric field-controlled semiconductor device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS538578A (en) * 1976-06-21 1978-01-26 Gen Electric Field controlled thyristor

Also Published As

Publication number Publication date
FR2394175A1 (fr) 1979-01-05
DE2824133A1 (de) 1978-12-21
US4223328A (en) 1980-09-16
DE2824133C2 (de) 1984-04-12
FR2394175B1 (US08188275-20120529-C00054.png) 1982-10-29
JPS542077A (en) 1979-01-09

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