JPS5748271A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5748271A
JPS5748271A JP12426580A JP12426580A JPS5748271A JP S5748271 A JPS5748271 A JP S5748271A JP 12426580 A JP12426580 A JP 12426580A JP 12426580 A JP12426580 A JP 12426580A JP S5748271 A JPS5748271 A JP S5748271A
Authority
JP
Japan
Prior art keywords
polycrystalline silicon
film
grow
silicon film
oxide film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP12426580A
Other languages
Japanese (ja)
Inventor
Shoichi Komatsu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Suwa Seikosha KK
Original Assignee
Seiko Epson Corp
Suwa Seikosha KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp, Suwa Seikosha KK filed Critical Seiko Epson Corp
Priority to JP12426580A priority Critical patent/JPS5748271A/en
Publication of JPS5748271A publication Critical patent/JPS5748271A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32105—Oxidation of silicon-containing layers

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

PURPOSE:To enhance reliability of element of a semiconductor device by a method whrein a polycrystalline silicon thin film is converted into an oxide film by thermal oxidation. CONSTITUTION:After pattern formation of the polycrystalline silicon film 3 is performed, a still thinner (100-1000Angstrom ) polycrystalline silicon film 8 is made to grow, and an oxide film 4 is made to grow thereon by vapor growth. By this constitution, even when photo etching for diffusion is performed after then, because the polycrystalline silicon film 3 is not violated by an etching liquid and act as an etching stopper, the end part of the polycrystalline film is not violated perfectly. The second polycrystalline silicon film 8 is converted into an oxide film 9 by thermal oxidation, and moreover the second field region is made to grow by CVD. After then Al is evaporated, and photoetching of Al is performed to complete wiring.
JP12426580A 1980-09-08 1980-09-08 Manufacture of semiconductor device Pending JPS5748271A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12426580A JPS5748271A (en) 1980-09-08 1980-09-08 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12426580A JPS5748271A (en) 1980-09-08 1980-09-08 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS5748271A true JPS5748271A (en) 1982-03-19

Family

ID=14881049

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12426580A Pending JPS5748271A (en) 1980-09-08 1980-09-08 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5748271A (en)

Similar Documents

Publication Publication Date Title
JPS64756A (en) Semiconductor device and capacitor device and manufacture thereof
JPS5467778A (en) Production of semiconductor device
JPS55160444A (en) Manufacture of semiconductor device
GB1449559A (en) Production of a semiconductor device
JPS53135263A (en) Production of semiconductor device
JPS5748271A (en) Manufacture of semiconductor device
JPS52124860A (en) Electrode formation method for semiconductor devices
JPS57133646A (en) Semiconductor integrated circuit device and manufacture thereof
JPS57159017A (en) Manufacture of semiconductor single crystal film
JPS53148988A (en) Manufacture of semiconductor substrate
JPS5687339A (en) Manufacture of semiconductor device
JPS57184229A (en) Manufacture of semiconductor device
JPS57159065A (en) Manufacture of semiconductor devcie
JPS5559778A (en) Method of fabricating semiconductor device
EP0067738A3 (en) Method of reducing encroachment in a semiconductor device
JPS543470A (en) Etching method
JPS5796567A (en) Manufacture of semiconductor device
JPS5539634A (en) Manufacture of semiconductor
JPS6415946A (en) Manufacture of semiconductor device
JPS5685853A (en) Manufacture of semiconductor device
JPS5788775A (en) Manufacture of non volatile semiconductor memory unit
JPS5349967A (en) Manufacture of semiconductor device
JPS5380175A (en) Manufacture of semiconductor device
JPS649639A (en) Manufacture of insulating film for element isolation of semiconductor device
JPS57124427A (en) Manufacture of semiconductor device