JPS5745246A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5745246A
JPS5745246A JP12007080A JP12007080A JPS5745246A JP S5745246 A JPS5745246 A JP S5745246A JP 12007080 A JP12007080 A JP 12007080A JP 12007080 A JP12007080 A JP 12007080A JP S5745246 A JPS5745246 A JP S5745246A
Authority
JP
Japan
Prior art keywords
substrate
annealed
annealing
substance
insulating film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP12007080A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6333292B2 (enrdf_load_stackoverflow
Inventor
Nobuo Sasaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP12007080A priority Critical patent/JPS5745246A/ja
Publication of JPS5745246A publication Critical patent/JPS5745246A/ja
Publication of JPS6333292B2 publication Critical patent/JPS6333292B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • High Energy & Nuclear Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Optics & Photonics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Recrystallisation Techniques (AREA)
JP12007080A 1980-08-30 1980-08-30 Manufacture of semiconductor device Granted JPS5745246A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12007080A JPS5745246A (en) 1980-08-30 1980-08-30 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12007080A JPS5745246A (en) 1980-08-30 1980-08-30 Manufacture of semiconductor device

Publications (2)

Publication Number Publication Date
JPS5745246A true JPS5745246A (en) 1982-03-15
JPS6333292B2 JPS6333292B2 (enrdf_load_stackoverflow) 1988-07-05

Family

ID=14777142

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12007080A Granted JPS5745246A (en) 1980-08-30 1980-08-30 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5745246A (enrdf_load_stackoverflow)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS595624A (ja) * 1982-07-01 1984-01-12 Fujitsu Ltd 半導体装置の製造方法
JP2006032426A (ja) * 2004-07-12 2006-02-02 Sony Corp 半導体装置の製造方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS595624A (ja) * 1982-07-01 1984-01-12 Fujitsu Ltd 半導体装置の製造方法
JP2006032426A (ja) * 2004-07-12 2006-02-02 Sony Corp 半導体装置の製造方法

Also Published As

Publication number Publication date
JPS6333292B2 (enrdf_load_stackoverflow) 1988-07-05

Similar Documents

Publication Publication Date Title
JPS56135969A (en) Manufacture of semiconductor device
IE802151L (en) Semiconductors
JPS6063926A (ja) 半導体装置の製造方法
JPS5745246A (en) Manufacture of semiconductor device
JPH0936376A (ja) 薄膜半導体装置の製造方法
US5770486A (en) Method of forming a transistor with an LDD structure
Aoyama et al. Effect of hydrogenation of the leakage currents of laser-annealed polysilicon TFTs
JPS5789254A (en) Manufacture of semiconductor device
JPS5759381A (en) Manufacture of semicondutor device
JPS57115823A (en) Manufacture of amorphous semiconductor film
JPS57136372A (en) Manufacture of mos type field effect semiconductor device
JPS57155775A (en) Semiconductor device
JPS5621367A (en) Manufacture of semiconductor device
JPS56157023A (en) Manufacture of semiconductor device
JPH02224339A (ja) 薄膜トランジスタの作製方法
JPH0697664B2 (ja) 化合物半導体のアニ−ル法
JPS5565459A (en) Manufacture of semiconductor device
JPH02275622A (ja) アニール方法
JPS57134970A (en) Manufacture of thin film transistor
KR970077730A (ko) 반도체 소자의 mosfet 제조 방법
JPS6468924A (en) Manufacture of semiconductor device
JPS57160132A (en) Manufacture of semiconductor device
JPS6473615A (en) Manufacture of iii-v compound semiconductor device
JPS56165338A (en) Semiconductor device and manufacture thereof
JPS56160070A (en) Manufacture of insulated gate type field effect transistor