JPS5745061B2 - - Google Patents

Info

Publication number
JPS5745061B2
JPS5745061B2 JP4414172A JP4414172A JPS5745061B2 JP S5745061 B2 JPS5745061 B2 JP S5745061B2 JP 4414172 A JP4414172 A JP 4414172A JP 4414172 A JP4414172 A JP 4414172A JP S5745061 B2 JPS5745061 B2 JP S5745061B2
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP4414172A
Other languages
Japanese (ja)
Other versions
JPS495575A (enrdf_load_stackoverflow
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP4414172A priority Critical patent/JPS5745061B2/ja
Priority to DE19732321390 priority patent/DE2321390C3/de
Priority to GB2009073A priority patent/GB1379011A/en
Priority to FR7315568A priority patent/FR2183111B1/fr
Priority to CA170,129A priority patent/CA980918A/en
Priority to IT4975573A priority patent/IT988158B/it
Publication of JPS495575A publication Critical patent/JPS495575A/ja
Publication of JPS5745061B2 publication Critical patent/JPS5745061B2/ja
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/221—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities of killers

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Chemically Coating (AREA)
JP4414172A 1972-05-02 1972-05-02 Expired JPS5745061B2 (enrdf_load_stackoverflow)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP4414172A JPS5745061B2 (enrdf_load_stackoverflow) 1972-05-02 1972-05-02
DE19732321390 DE2321390C3 (de) 1972-05-02 1973-04-27 Verfahren zur Herstellung einer Halbleitervorrichtung
GB2009073A GB1379011A (en) 1972-05-02 1973-04-27 Method of manufacturing semiconductor devices
FR7315568A FR2183111B1 (enrdf_load_stackoverflow) 1972-05-02 1973-04-27
CA170,129A CA980918A (en) 1972-05-02 1973-05-01 Method of forming a nickel electrode on a silicon substrate
IT4975573A IT988158B (it) 1972-05-02 1973-05-02 Procedimento per la fabbricazio ne di dispositivi a semicondut tori e prodotto ottenuto

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4414172A JPS5745061B2 (enrdf_load_stackoverflow) 1972-05-02 1972-05-02

Publications (2)

Publication Number Publication Date
JPS495575A JPS495575A (enrdf_load_stackoverflow) 1974-01-18
JPS5745061B2 true JPS5745061B2 (enrdf_load_stackoverflow) 1982-09-25

Family

ID=12683347

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4414172A Expired JPS5745061B2 (enrdf_load_stackoverflow) 1972-05-02 1972-05-02

Country Status (6)

Country Link
JP (1) JPS5745061B2 (enrdf_load_stackoverflow)
CA (1) CA980918A (enrdf_load_stackoverflow)
DE (1) DE2321390C3 (enrdf_load_stackoverflow)
FR (1) FR2183111B1 (enrdf_load_stackoverflow)
GB (1) GB1379011A (enrdf_load_stackoverflow)
IT (1) IT988158B (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60182010A (ja) * 1984-02-29 1985-09-17 Canon Electronics Inc ヘツド装置

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS591667A (ja) * 1982-05-20 1984-01-07 ゼネラル・エレクトリツク・カンパニイ シリコンに対する白金の無電解めつき法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL241982A (enrdf_load_stackoverflow) * 1958-08-13 1900-01-01
NL134170C (enrdf_load_stackoverflow) * 1963-12-17 1900-01-01
DE1213921B (de) * 1964-08-25 1966-04-07 Bosch Gmbh Robert Verfahren zur Herstellung einer Halbleiteranordnung
DE1283970B (de) * 1966-03-19 1968-11-28 Siemens Ag Metallischer Kontakt an einem Halbleiterbauelement
US3599054A (en) * 1968-11-22 1971-08-10 Bell Telephone Labor Inc Barrier layer devices and methods for their manufacture
US3640783A (en) * 1969-08-11 1972-02-08 Trw Semiconductors Inc Semiconductor devices with diffused platinum

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60182010A (ja) * 1984-02-29 1985-09-17 Canon Electronics Inc ヘツド装置

Also Published As

Publication number Publication date
GB1379011A (en) 1975-01-02
JPS495575A (enrdf_load_stackoverflow) 1974-01-18
IT988158B (it) 1975-04-10
CA980918A (en) 1975-12-30
FR2183111A1 (enrdf_load_stackoverflow) 1973-12-14
DE2321390B2 (de) 1976-10-28
DE2321390A1 (de) 1973-11-15
FR2183111B1 (enrdf_load_stackoverflow) 1976-11-12
DE2321390C3 (de) 1982-07-08

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