JPS5742145A - Semiconductor integrated circuit device - Google Patents

Semiconductor integrated circuit device

Info

Publication number
JPS5742145A
JPS5742145A JP11960580A JP11960580A JPS5742145A JP S5742145 A JPS5742145 A JP S5742145A JP 11960580 A JP11960580 A JP 11960580A JP 11960580 A JP11960580 A JP 11960580A JP S5742145 A JPS5742145 A JP S5742145A
Authority
JP
Japan
Prior art keywords
layer
island
isolating
transistor
epitaxial layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11960580A
Other languages
Japanese (ja)
Inventor
Yoichiro Taki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP11960580A priority Critical patent/JPS5742145A/en
Publication of JPS5742145A publication Critical patent/JPS5742145A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/761—PN junctions

Abstract

PURPOSE:To prevent erroneous operation due to a parasitic transistor by isolating an N epitaxial layer on a P type substrate by a P+ isolating layer providing island regions, and giving a potential which is lower than the lowest potential in the island regions to the isolating layer. CONSTITUTION:The N epitaxial layer is formed on the P type Si substrate having N<+> embedded layers 31 and 32, and the island regions 21 and 22 are formed by isolating the epitaxial layer by a P<+> layer 4. A protective ring 5a and a connecting layer 6 are provided in the island region 21, and a base 7, an N<+> emitter 9, and a base taking out layer 8 provided in the island region 22. Windows are opened in an SiO2 film 10, and electrodes are provided. An electrode 19 is provided on the isolating layer 4 and the lowest potential is given to it. In this constitution, the parasitic N-P-N transistor which is formed between an input circuit block in the island 21 and a transistor block in the island 22 is not operated under the normal operating condition. Therefore, the erroneous operation of IC can be prevented.
JP11960580A 1980-08-26 1980-08-26 Semiconductor integrated circuit device Pending JPS5742145A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11960580A JPS5742145A (en) 1980-08-26 1980-08-26 Semiconductor integrated circuit device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11960580A JPS5742145A (en) 1980-08-26 1980-08-26 Semiconductor integrated circuit device

Publications (1)

Publication Number Publication Date
JPS5742145A true JPS5742145A (en) 1982-03-09

Family

ID=14765528

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11960580A Pending JPS5742145A (en) 1980-08-26 1980-08-26 Semiconductor integrated circuit device

Country Status (1)

Country Link
JP (1) JPS5742145A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0703620A1 (en) * 1994-09-21 1996-03-27 STMicroelectronics S.r.l. Circuit for preventing turn-on of parasitic components in integrated circuits including a power stage and low-voltage control circuitry

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS538637A (en) * 1976-07-13 1978-01-26 Taikisha Kk Method of recovery of paint mist in powder painting booth
JPS5346702A (en) * 1976-10-11 1978-04-26 Pico Electronics Ltd Record changer

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS538637A (en) * 1976-07-13 1978-01-26 Taikisha Kk Method of recovery of paint mist in powder painting booth
JPS5346702A (en) * 1976-10-11 1978-04-26 Pico Electronics Ltd Record changer

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0703620A1 (en) * 1994-09-21 1996-03-27 STMicroelectronics S.r.l. Circuit for preventing turn-on of parasitic components in integrated circuits including a power stage and low-voltage control circuitry
US5661430A (en) * 1994-09-21 1997-08-26 Sgs-Thomson Microelectronics S.R.L. Circuit for preventing operation of parasitic components in integrated circuits having a power stage and low-voltage control circuitry

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