JPS5740937A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS5740937A JPS5740937A JP55116279A JP11627980A JPS5740937A JP S5740937 A JPS5740937 A JP S5740937A JP 55116279 A JP55116279 A JP 55116279A JP 11627980 A JP11627980 A JP 11627980A JP S5740937 A JPS5740937 A JP S5740937A
- Authority
- JP
- Japan
- Prior art keywords
- low
- section
- introducing
- temperature
- heater
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C8/00—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
- C23C8/06—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases
- C23C8/08—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases only one element being applied
- C23C8/10—Oxidising
- C23C8/16—Oxidising using oxygen-containing compounds, e.g. water, carbon dioxide
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F22—STEAM GENERATION
- F22B—METHODS OF STEAM GENERATION; STEAM BOILERS
- F22B1/00—Methods of steam generation characterised by form of heating method
- F22B1/003—Methods of steam generation characterised by form of heating method using combustion of hydrogen with oxygen
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP55116279A JPS5740937A (en) | 1980-08-22 | 1980-08-22 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP55116279A JPS5740937A (en) | 1980-08-22 | 1980-08-22 | Manufacture of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5740937A true JPS5740937A (en) | 1982-03-06 |
Family
ID=14683130
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP55116279A Pending JPS5740937A (en) | 1980-08-22 | 1980-08-22 | Manufacture of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5740937A (ja) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0209065A2 (en) * | 1985-07-15 | 1987-01-21 | Dainippon Screen Mfg. Co., Ltd. | Method for supplying an oxygen gas containing steam for the surface treatment of semiconductor wafers |
JPS6349059U (ja) * | 1986-09-19 | 1988-04-02 | ||
EP0671761A1 (en) * | 1992-11-17 | 1995-09-13 | OHMI, Tadahiro | Apparatus for forming low-temperature oxide films and method of forming low-temperature oxide films |
US5618349A (en) * | 1993-07-24 | 1997-04-08 | Yamaha Corporation | Thermal treatment with enhanced intra-wafer, intra-and inter-batch uniformity |
KR100304287B1 (ko) * | 1992-04-28 | 2001-11-30 | 히가시 데쓰로 | 연소장치 및 이것을 구비한 산화장치 |
-
1980
- 1980-08-22 JP JP55116279A patent/JPS5740937A/ja active Pending
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0209065A2 (en) * | 1985-07-15 | 1987-01-21 | Dainippon Screen Mfg. Co., Ltd. | Method for supplying an oxygen gas containing steam for the surface treatment of semiconductor wafers |
JPS6349059U (ja) * | 1986-09-19 | 1988-04-02 | ||
KR100304287B1 (ko) * | 1992-04-28 | 2001-11-30 | 히가시 데쓰로 | 연소장치 및 이것을 구비한 산화장치 |
EP0671761A1 (en) * | 1992-11-17 | 1995-09-13 | OHMI, Tadahiro | Apparatus for forming low-temperature oxide films and method of forming low-temperature oxide films |
EP0671761A4 (en) * | 1992-11-17 | 1997-10-15 | Tadahiro Ohmi | APPARATUS AND METHOD FOR FORMING LOW TEMPERATURE OXIDE FILMS. |
US5618349A (en) * | 1993-07-24 | 1997-04-08 | Yamaha Corporation | Thermal treatment with enhanced intra-wafer, intra-and inter-batch uniformity |
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