JPS5735483A - Solidstate image sensor - Google Patents

Solidstate image sensor

Info

Publication number
JPS5735483A
JPS5735483A JP10962380A JP10962380A JPS5735483A JP S5735483 A JPS5735483 A JP S5735483A JP 10962380 A JP10962380 A JP 10962380A JP 10962380 A JP10962380 A JP 10962380A JP S5735483 A JPS5735483 A JP S5735483A
Authority
JP
Japan
Prior art keywords
regions
image sensor
beneath
given
stored electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP10962380A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6340389B2 (enrdf_load_stackoverflow
Inventor
Yoshihiro Miyamoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP10962380A priority Critical patent/JPS5735483A/ja
Publication of JPS5735483A publication Critical patent/JPS5735483A/ja
Publication of JPS6340389B2 publication Critical patent/JPS6340389B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
JP10962380A 1980-08-09 1980-08-09 Solidstate image sensor Granted JPS5735483A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10962380A JPS5735483A (en) 1980-08-09 1980-08-09 Solidstate image sensor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10962380A JPS5735483A (en) 1980-08-09 1980-08-09 Solidstate image sensor

Publications (2)

Publication Number Publication Date
JPS5735483A true JPS5735483A (en) 1982-02-26
JPS6340389B2 JPS6340389B2 (enrdf_load_stackoverflow) 1988-08-10

Family

ID=14514975

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10962380A Granted JPS5735483A (en) 1980-08-09 1980-08-09 Solidstate image sensor

Country Status (1)

Country Link
JP (1) JPS5735483A (enrdf_load_stackoverflow)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5953419U (ja) * 1982-09-29 1984-04-07 株式会社ヨシタケ製作所 液体用減圧弁
JPS63163505U (enrdf_load_stackoverflow) * 1987-04-14 1988-10-25
JPH02104407U (enrdf_load_stackoverflow) * 1989-02-01 1990-08-20

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5953419U (ja) * 1982-09-29 1984-04-07 株式会社ヨシタケ製作所 液体用減圧弁
JPS63163505U (enrdf_load_stackoverflow) * 1987-04-14 1988-10-25
JPH02104407U (enrdf_load_stackoverflow) * 1989-02-01 1990-08-20

Also Published As

Publication number Publication date
JPS6340389B2 (enrdf_load_stackoverflow) 1988-08-10

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