JPS6420654A - Solid-state image sensing device and manufacture thereof - Google Patents

Solid-state image sensing device and manufacture thereof

Info

Publication number
JPS6420654A
JPS6420654A JP62176462A JP17646287A JPS6420654A JP S6420654 A JPS6420654 A JP S6420654A JP 62176462 A JP62176462 A JP 62176462A JP 17646287 A JP17646287 A JP 17646287A JP S6420654 A JPS6420654 A JP S6420654A
Authority
JP
Japan
Prior art keywords
layer
type
well
reading
transfer unit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62176462A
Other languages
Japanese (ja)
Inventor
Masayuki Matsunaga
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP62176462A priority Critical patent/JPS6420654A/en
Publication of JPS6420654A publication Critical patent/JPS6420654A/en
Pending legal-status Critical Current

Links

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)

Abstract

PURPOSE:To reduce a smear phenomenon without affecting an adverse influence to a storage charge reading operation by forming a first conductivity type barrier layer under a transfer unit so as not to invade a reading gate. CONSTITUTION:A P-type well 2 is formed on an N-type semiconductor substrate 1, and an N-type photodetector 3 and an N-type transfer unit 4 are formed on the well 2. An insulating layer 5 is formed on the upper face of the well 2, and reading/transferring electrode 6 is formed in the layer 5. A shielding film 7 is formed on the upper face of the layer 5, and the film 7 has an opening 8 at a section corresponding to above the photodetector 3. An external light is incident from the opening 8. Further, a P-type barrier layer 10 is so formed directly under the transfer unit 4 as not to invade the reading gate 2a of stored signal charge. The concentration of the layer 10 is higher than the impurity concentration of the well 2 to suppress the extending region of a depletion layer 9. Thus, a smear phenomenon can be reduced without affecting an adverse influence to the reading operation of the stored charge.
JP62176462A 1987-07-15 1987-07-15 Solid-state image sensing device and manufacture thereof Pending JPS6420654A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62176462A JPS6420654A (en) 1987-07-15 1987-07-15 Solid-state image sensing device and manufacture thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62176462A JPS6420654A (en) 1987-07-15 1987-07-15 Solid-state image sensing device and manufacture thereof

Publications (1)

Publication Number Publication Date
JPS6420654A true JPS6420654A (en) 1989-01-24

Family

ID=16014116

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62176462A Pending JPS6420654A (en) 1987-07-15 1987-07-15 Solid-state image sensing device and manufacture thereof

Country Status (1)

Country Link
JP (1) JPS6420654A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04239173A (en) * 1991-01-14 1992-08-27 Sharp Corp Manufacture of solid-state image sensing device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6089967A (en) * 1983-10-24 1985-05-20 Sony Corp Photoelectric conversion element

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6089967A (en) * 1983-10-24 1985-05-20 Sony Corp Photoelectric conversion element

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04239173A (en) * 1991-01-14 1992-08-27 Sharp Corp Manufacture of solid-state image sensing device

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