JPS5732643A - Annealing method of compound semiconductor single crystal - Google Patents
Annealing method of compound semiconductor single crystalInfo
- Publication number
- JPS5732643A JPS5732643A JP10721980A JP10721980A JPS5732643A JP S5732643 A JPS5732643 A JP S5732643A JP 10721980 A JP10721980 A JP 10721980A JP 10721980 A JP10721980 A JP 10721980A JP S5732643 A JPS5732643 A JP S5732643A
- Authority
- JP
- Japan
- Prior art keywords
- single crystal
- compound semiconductor
- carbon
- covered
- semiconductor single
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000013078 crystal Substances 0.000 title abstract 7
- 238000000137 annealing Methods 0.000 title abstract 2
- 150000001875 compounds Chemical class 0.000 title abstract 2
- 238000000034 method Methods 0.000 title abstract 2
- 239000004065 semiconductor Substances 0.000 title abstract 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 abstract 3
- 229910052799 carbon Inorganic materials 0.000 abstract 3
- 239000000843 powder Substances 0.000 abstract 2
- 239000002775 capsule Substances 0.000 abstract 1
- 239000007789 gas Substances 0.000 abstract 1
- 239000011261 inert gas Substances 0.000 abstract 1
- 239000007788 liquid Substances 0.000 abstract 1
- 239000002245 particle Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
- H01L21/3245—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering of AIIIBV compounds
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10721980A JPS5732643A (en) | 1980-08-06 | 1980-08-06 | Annealing method of compound semiconductor single crystal |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10721980A JPS5732643A (en) | 1980-08-06 | 1980-08-06 | Annealing method of compound semiconductor single crystal |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5732643A true JPS5732643A (en) | 1982-02-22 |
| JPH022840B2 JPH022840B2 (enrdf_load_stackoverflow) | 1990-01-19 |
Family
ID=14453503
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10721980A Granted JPS5732643A (en) | 1980-08-06 | 1980-08-06 | Annealing method of compound semiconductor single crystal |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5732643A (enrdf_load_stackoverflow) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60171300A (ja) * | 1984-02-14 | 1985-09-04 | Sumitomo Electric Ind Ltd | 化合物半導体結晶の均質化方法 |
| JPS61222999A (ja) * | 1985-03-27 | 1986-10-03 | Dowa Mining Co Ltd | ３−ｖ族化合物半導体単結晶の電気的特性改良方法 |
| JPS62206839A (ja) * | 1986-03-06 | 1987-09-11 | Mitsubishi Monsanto Chem Co | 発光ダイオ−ド用エピタキシヤルウエハの製造方法 |
| US5093284A (en) * | 1988-05-27 | 1992-03-03 | Hitachi Chemical Company, Ltd. | Process for homogenizing compound semiconductor single crystal in properties |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS48102570A (enrdf_load_stackoverflow) * | 1972-04-04 | 1973-12-22 | ||
| JPS4933552A (enrdf_load_stackoverflow) * | 1972-07-26 | 1974-03-28 | ||
| JPS5361269A (en) * | 1976-11-15 | 1978-06-01 | Hitachi Ltd | Heat treatment of compound semiconductor |
-
1980
- 1980-08-06 JP JP10721980A patent/JPS5732643A/ja active Granted
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS48102570A (enrdf_load_stackoverflow) * | 1972-04-04 | 1973-12-22 | ||
| JPS4933552A (enrdf_load_stackoverflow) * | 1972-07-26 | 1974-03-28 | ||
| JPS5361269A (en) * | 1976-11-15 | 1978-06-01 | Hitachi Ltd | Heat treatment of compound semiconductor |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60171300A (ja) * | 1984-02-14 | 1985-09-04 | Sumitomo Electric Ind Ltd | 化合物半導体結晶の均質化方法 |
| JPS61222999A (ja) * | 1985-03-27 | 1986-10-03 | Dowa Mining Co Ltd | ３−ｖ族化合物半導体単結晶の電気的特性改良方法 |
| JPS62206839A (ja) * | 1986-03-06 | 1987-09-11 | Mitsubishi Monsanto Chem Co | 発光ダイオ−ド用エピタキシヤルウエハの製造方法 |
| US5093284A (en) * | 1988-05-27 | 1992-03-03 | Hitachi Chemical Company, Ltd. | Process for homogenizing compound semiconductor single crystal in properties |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH022840B2 (enrdf_load_stackoverflow) | 1990-01-19 |
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