JPS5732181A - Solid state image pickup device - Google Patents
Solid state image pickup deviceInfo
- Publication number
- JPS5732181A JPS5732181A JP10721780A JP10721780A JPS5732181A JP S5732181 A JPS5732181 A JP S5732181A JP 10721780 A JP10721780 A JP 10721780A JP 10721780 A JP10721780 A JP 10721780A JP S5732181 A JPS5732181 A JP S5732181A
- Authority
- JP
- Japan
- Prior art keywords
- charge
- transfer element
- transferred
- photoconductive film
- signal charge
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000007787 solid Substances 0.000 title 1
- 230000010287 polarization Effects 0.000 abstract 2
- 238000006243 chemical reaction Methods 0.000 abstract 1
- 230000003287 optical effect Effects 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
- H04N25/73—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors using interline transfer [IT]
Landscapes
- Engineering & Computer Science (AREA)
- Multimedia (AREA)
- Signal Processing (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Abstract
PURPOSE:To suppress the reduce of amount of signal charge by supplying signal charge from a source provided in a unit cell without using charge obtained from photoelectrical conversion made by incident light as the signal charge. CONSTITUTION:When an optical image is projected on a device, a photoconductive film causes polarization according to its light intensity distribution and the potential of a metallic electrode rises to form a channel near the insulating film interface of a semiconductor substrate. Then, when a transfer electrode 18 is turned on, charge which corresponds to the polarization of the photoconductive film is transferred to a vertical-transfer-charge transfer element 16. As well as the operation of an interline type charge transfer element area sensor, the signal charge is transferred through the charge transfer element 16 and a horizontal-transfer-charge transfer element 20 successively and then amplified by an output transistor 21. At this time, after the charge is transferred to the charge transfer element 16, the potential of a transparent electrode is held negative for a certain time to depolarize the photoconductive film.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10721780A JPS5732181A (en) | 1980-08-06 | 1980-08-06 | Solid state image pickup device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10721780A JPS5732181A (en) | 1980-08-06 | 1980-08-06 | Solid state image pickup device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5732181A true JPS5732181A (en) | 1982-02-20 |
Family
ID=14453449
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP10721780A Pending JPS5732181A (en) | 1980-08-06 | 1980-08-06 | Solid state image pickup device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5732181A (en) |
-
1980
- 1980-08-06 JP JP10721780A patent/JPS5732181A/en active Pending
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