JPS5732181A - Solid state image pickup device - Google Patents

Solid state image pickup device

Info

Publication number
JPS5732181A
JPS5732181A JP10721780A JP10721780A JPS5732181A JP S5732181 A JPS5732181 A JP S5732181A JP 10721780 A JP10721780 A JP 10721780A JP 10721780 A JP10721780 A JP 10721780A JP S5732181 A JPS5732181 A JP S5732181A
Authority
JP
Japan
Prior art keywords
charge
transfer element
transferred
photoconductive film
signal charge
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10721780A
Other languages
Japanese (ja)
Inventor
Masayuki Matsunaga
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP10721780A priority Critical patent/JPS5732181A/en
Publication of JPS5732181A publication Critical patent/JPS5732181A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
    • H04N25/73—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors using interline transfer [IT]

Abstract

PURPOSE:To suppress the reduce of amount of signal charge by supplying signal charge from a source provided in a unit cell without using charge obtained from photoelectrical conversion made by incident light as the signal charge. CONSTITUTION:When an optical image is projected on a device, a photoconductive film causes polarization according to its light intensity distribution and the potential of a metallic electrode rises to form a channel near the insulating film interface of a semiconductor substrate. Then, when a transfer electrode 18 is turned on, charge which corresponds to the polarization of the photoconductive film is transferred to a vertical-transfer-charge transfer element 16. As well as the operation of an interline type charge transfer element area sensor, the signal charge is transferred through the charge transfer element 16 and a horizontal-transfer-charge transfer element 20 successively and then amplified by an output transistor 21. At this time, after the charge is transferred to the charge transfer element 16, the potential of a transparent electrode is held negative for a certain time to depolarize the photoconductive film.
JP10721780A 1980-08-06 1980-08-06 Solid state image pickup device Pending JPS5732181A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10721780A JPS5732181A (en) 1980-08-06 1980-08-06 Solid state image pickup device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10721780A JPS5732181A (en) 1980-08-06 1980-08-06 Solid state image pickup device

Publications (1)

Publication Number Publication Date
JPS5732181A true JPS5732181A (en) 1982-02-20

Family

ID=14453449

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10721780A Pending JPS5732181A (en) 1980-08-06 1980-08-06 Solid state image pickup device

Country Status (1)

Country Link
JP (1) JPS5732181A (en)

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