JPS5729860B2 - - Google Patents

Info

Publication number
JPS5729860B2
JPS5729860B2 JP9263478A JP9263478A JPS5729860B2 JP S5729860 B2 JPS5729860 B2 JP S5729860B2 JP 9263478 A JP9263478 A JP 9263478A JP 9263478 A JP9263478 A JP 9263478A JP S5729860 B2 JPS5729860 B2 JP S5729860B2
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP9263478A
Other languages
Japanese (ja)
Other versions
JPS5519851A (en
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP9263478A priority Critical patent/JPS5519851A/ja
Priority to US06/058,501 priority patent/US4295265A/en
Priority to NL7905759A priority patent/NL7905759A/nl
Priority to DE2931031A priority patent/DE2931031C2/de
Publication of JPS5519851A publication Critical patent/JPS5519851A/ja
Publication of JPS5729860B2 publication Critical patent/JPS5729860B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1025—Channel region of field-effect devices
    • H01L29/1029—Channel region of field-effect devices of field-effect transistors
    • H01L29/1033—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure
    • H01L29/1041—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure with a non-uniform doping structure in the channel region surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
    • H01L29/7881—Programmable transistors with only two possible levels of programmation
    • H01L29/7883—Programmable transistors with only two possible levels of programmation charging by tunnelling of carriers, e.g. Fowler-Nordheim tunnelling

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Toxicology (AREA)
  • Manufacturing & Machinery (AREA)
  • Non-Volatile Memory (AREA)
  • Semiconductor Memories (AREA)
JP9263478A 1978-07-31 1978-07-31 Manufacture of non-volatile memories Granted JPS5519851A (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP9263478A JPS5519851A (en) 1978-07-31 1978-07-31 Manufacture of non-volatile memories
US06/058,501 US4295265A (en) 1978-07-31 1979-07-18 Method for producing a nonvolatile semiconductor memory
NL7905759A NL7905759A (nl) 1978-07-31 1979-07-25 Werkwijze voor het vervaardigen van een niet-vluchtig halfgeleidergeheugen.
DE2931031A DE2931031C2 (de) 1978-07-31 1979-07-31 Nicht-flüchtige Halbleiterspeicherzelle und Verfahren zu ihrer Herstellung

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9263478A JPS5519851A (en) 1978-07-31 1978-07-31 Manufacture of non-volatile memories

Publications (2)

Publication Number Publication Date
JPS5519851A JPS5519851A (en) 1980-02-12
JPS5729860B2 true JPS5729860B2 (de) 1982-06-25

Family

ID=14059866

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9263478A Granted JPS5519851A (en) 1978-07-31 1978-07-31 Manufacture of non-volatile memories

Country Status (4)

Country Link
US (1) US4295265A (de)
JP (1) JPS5519851A (de)
DE (1) DE2931031C2 (de)
NL (1) NL7905759A (de)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59187268A (ja) * 1983-04-07 1984-10-24 Hanshin Electric Co Ltd 車両用表示情報計測装置

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4332077A (en) * 1979-08-10 1982-06-01 Rca Corporation Method of making electrically programmable control gate injected floating gate solid state memory transistor
IT1209227B (it) * 1980-06-04 1989-07-16 Sgs Microelettronica Spa Cella di memoria non volatile a 'gate' flottante elettricamente alterabile.
DE3141390A1 (de) * 1981-10-19 1983-04-28 Deutsche Itt Industries Gmbh, 7800 Freiburg Floating-gate-speicherzelle, bei der das schreiben und loeschen durch injektion heisser ladungstraeger erfolgt
JPS58119672A (ja) * 1982-01-09 1983-07-16 Mitsubishi Electric Corp 半導体不揮発性メモリ装置
JPS58190069A (ja) * 1982-04-29 1983-11-05 Mitsubishi Electric Corp 半導体不揮発性メモリ装置
JPS5963765A (ja) * 1982-10-04 1984-04-11 Mitsubishi Electric Corp 浮遊ゲ−ト型不揮発性メモリ−装置
EP0164605B1 (de) * 1984-05-17 1990-02-28 Kabushiki Kaisha Toshiba Verfahren zur Herstellung eines nichtflüchtigen Halbleiter-EEPROM-Elementes
US4997781A (en) * 1987-11-24 1991-03-05 Texas Instruments Incorporated Method of making planarized EPROM array
IT1227989B (it) * 1988-12-05 1991-05-20 Sgs Thomson Microelectronics Matrice di celle di memoria eprom con struttura a tovaglia con migliorato rapporto capacitivo e processo per la sua fabbricazione
US5296396A (en) * 1988-12-05 1994-03-22 Sgs-Thomson Microelectronics S.R.L. Matrix of EPROM memory cells with a tablecloth structure having an improved capacitative ratio and a process for its manufacture
US5070843A (en) * 1989-05-15 1991-12-10 Mitsubishi Denki Kabushiki Kaisha Ignition timing control apparatus of internal-combustion engine
JP2509717B2 (ja) * 1989-12-06 1996-06-26 株式会社東芝 半導体装置の製造方法
ATE217448T1 (de) * 1990-01-22 2002-05-15 Silicon Storage Tech Inc Nichtflüchtige elektrisch veränderbare eintransistor-halbleiterspeicheranordnung mit rekristallisiertem schwebendem gate
US5045488A (en) * 1990-01-22 1991-09-03 Silicon Storage Technology, Inc. Method of manufacturing a single transistor non-volatile, electrically alterable semiconductor memory device
IT1252214B (it) * 1991-12-13 1995-06-05 Sgs Thomson Microelectronics Procedimento per la definizione di porzioni di ossido sottile particolarmente per celle di memoria a sola lettura programmabili e cancellabile elettricamente.
BE1007475A3 (nl) * 1993-09-06 1995-07-11 Philips Electronics Nv Halfgeleiderinrichting met een niet-vluchtig geheugen en werkwijze ter vervaardiging van een dergelijke halfgeleiderinrichting.
US5479368A (en) * 1993-09-30 1995-12-26 Cirrus Logic, Inc. Spacer flash cell device with vertically oriented floating gate
US5640031A (en) * 1993-09-30 1997-06-17 Keshtbod; Parviz Spacer flash cell process
US5620913A (en) * 1996-05-28 1997-04-15 Chartered Semiconductor Manufacturing Pte Ltd. Method of making a flash memory cell
JP2000183346A (ja) * 1998-12-15 2000-06-30 Toshiba Corp 半導体装置及びその製造方法
US6090668A (en) * 1999-02-11 2000-07-18 Taiwan Semiconductor Manufacturing Company Method to fabricate sharp tip of poly in split gate flash
US6765258B1 (en) * 2002-07-31 2004-07-20 Intelligent Sources Development Corp. Stack-gate flash memory cell structure and its contactless flash memory arrays
US9978848B2 (en) * 2015-07-17 2018-05-22 Avago Technologies General Ip (Singapore) Pte. Ltd. UTBB FDSOI split gate devices

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54107269A (en) * 1978-02-10 1979-08-22 Nec Corp Non-volatile semiconductor memory and its production

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3789504A (en) * 1971-10-12 1974-02-05 Gte Laboratories Inc Method of manufacturing an n-channel mos field-effect transistor
US4096522A (en) * 1974-09-26 1978-06-20 Tokyo Shibaura Electric Co., Ltd. Monolithic semiconductor mask programmable ROM and a method for manufacturing the same
JPS5851427B2 (ja) * 1975-09-04 1983-11-16 株式会社日立製作所 絶縁ゲ−ト型リ−ド・オンリ−・メモリの製造方法
US4114255A (en) * 1976-08-16 1978-09-19 Intel Corporation Floating gate storage device and method of fabrication
US4090289A (en) * 1976-08-18 1978-05-23 International Business Machines Corporation Method of fabrication for field effect transistors (FETs) having a common channel stopper and FET channel doping with the channel stopper doping self-aligned to the dielectric isolation between FETS

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54107269A (en) * 1978-02-10 1979-08-22 Nec Corp Non-volatile semiconductor memory and its production

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59187268A (ja) * 1983-04-07 1984-10-24 Hanshin Electric Co Ltd 車両用表示情報計測装置

Also Published As

Publication number Publication date
DE2931031C2 (de) 1985-05-09
NL7905759A (nl) 1980-02-04
DE2931031A1 (de) 1980-02-14
US4295265A (en) 1981-10-20
JPS5519851A (en) 1980-02-12

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