JPS5728391A - Optical semiconductor device - Google Patents
Optical semiconductor deviceInfo
- Publication number
- JPS5728391A JPS5728391A JP10396080A JP10396080A JPS5728391A JP S5728391 A JPS5728391 A JP S5728391A JP 10396080 A JP10396080 A JP 10396080A JP 10396080 A JP10396080 A JP 10396080A JP S5728391 A JPS5728391 A JP S5728391A
- Authority
- JP
- Japan
- Prior art keywords
- film
- optical fiber
- cleavage
- plane
- spherical section
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Abstract
PURPOSE:To obtain the small cheap optical semiconductor device with an external reflector by utilizing an existing optical fiber by a method wherein a spherical section is formed at one end of the optical fiber with fixed length and a semilight transmitting film at the other end, and a light emitting surface of the semiconductor laser device is approached and opposed to the spherical section. CONSTITUTION:A high reflection film, where a quarter wavelength film of Al2O3 is formed in six layers as Si and reflexibility thereof is 98% or higher, is shaped on a plane of cleavage 1s of the semiconductor laser 1, and an antireflection film, reflexibility thereof is made approximately 0.1% by a SiO2 film, thickness thereof is made 1,000Angstrom , and a Si3N4 film, thickness thereof is made 800Angstrom , is formed on a plane of cleavage 1s' opposing to the high reflection film. The optical fiber 4, which is multiple-mode optical fiber, a core diameter thereof is 60mum and NA thereof is 0.2, the length in the optical axis direction of a tapered section 4C thereof is 400mum and the radius of curvature of the spherical section 4A thereof is approximately 30mum, is approached and opposed to the plane of cleavage 1s' of the semiconductor lasre 1, and light projected into the optical fiber 4 is made approximately 85% or higher.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10396080A JPS5728391A (en) | 1980-07-29 | 1980-07-29 | Optical semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10396080A JPS5728391A (en) | 1980-07-29 | 1980-07-29 | Optical semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5728391A true JPS5728391A (en) | 1982-02-16 |
Family
ID=14367951
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP10396080A Pending JPS5728391A (en) | 1980-07-29 | 1980-07-29 | Optical semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5728391A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59210684A (en) * | 1983-05-16 | 1984-11-29 | Toshiba Corp | Semiconductor laser |
JPS6164182A (en) * | 1984-09-05 | 1986-04-02 | Matsushita Electric Ind Co Ltd | Optical feedback type semiconductor laser device |
US9564778B2 (en) | 2009-03-03 | 2017-02-07 | Dyson Technologies Limited | Stator core |
-
1980
- 1980-07-29 JP JP10396080A patent/JPS5728391A/en active Pending
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59210684A (en) * | 1983-05-16 | 1984-11-29 | Toshiba Corp | Semiconductor laser |
JPS6357955B2 (en) * | 1983-05-16 | 1988-11-14 | Tokyo Shibaura Electric Co | |
JPS6164182A (en) * | 1984-09-05 | 1986-04-02 | Matsushita Electric Ind Co Ltd | Optical feedback type semiconductor laser device |
US9564778B2 (en) | 2009-03-03 | 2017-02-07 | Dyson Technologies Limited | Stator core |
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