JPS5728358A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5728358A
JPS5728358A JP10386280A JP10386280A JPS5728358A JP S5728358 A JPS5728358 A JP S5728358A JP 10386280 A JP10386280 A JP 10386280A JP 10386280 A JP10386280 A JP 10386280A JP S5728358 A JPS5728358 A JP S5728358A
Authority
JP
Japan
Prior art keywords
pattern
layer
substrate
polycrystalline
oxide film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10386280A
Other languages
Japanese (ja)
Inventor
Toshimitsu Kamitaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Kyushu Ltd
Original Assignee
NEC Kyushu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Kyushu Ltd filed Critical NEC Kyushu Ltd
Priority to JP10386280A priority Critical patent/JPS5728358A/en
Publication of JPS5728358A publication Critical patent/JPS5728358A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

PURPOSE:To obtain a contact structure having a high density and high reliability, by narrowing the boundary part between a substrate main surface and a polycrystalline Si pattern of the common open region in which a metal contact is provided. CONSTITUTION:On the main surface of a substrate 1 having a diffused layer 2, a polycrystalline Si pattern 5 is formed through an oxide film, on which an oxide film 3 for interlayer insulation is provided. An opening 7 is formed in said film 3 to form a contact electrode common to the diffused layer 2 and the pattern 5 by means of, for example, an Al layer 4. The opening 7 is so formed that a part 11 extending over the boundary part 10 between the pattern 5 and the substrate surface has a narrow neck shape. Therefore, a steep slope is formed at the neck part 11 as shown in the section A-A', however, such slope that may disconnect the Al layer 4 can be prevented from being formed at the neck part 11 as shown in the section B-B'. Thus, a minute contact structure having good contactability and hgih reliability can be obtained.
JP10386280A 1980-07-29 1980-07-29 Semiconductor device Pending JPS5728358A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10386280A JPS5728358A (en) 1980-07-29 1980-07-29 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10386280A JPS5728358A (en) 1980-07-29 1980-07-29 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS5728358A true JPS5728358A (en) 1982-02-16

Family

ID=14365253

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10386280A Pending JPS5728358A (en) 1980-07-29 1980-07-29 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5728358A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6450932A (en) * 1987-08-21 1989-02-27 Nec Corp Minute-scratch hardness measuring machine

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6450932A (en) * 1987-08-21 1989-02-27 Nec Corp Minute-scratch hardness measuring machine

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