JPS5727489A - Memory device - Google Patents

Memory device

Info

Publication number
JPS5727489A
JPS5727489A JP10147280A JP10147280A JPS5727489A JP S5727489 A JPS5727489 A JP S5727489A JP 10147280 A JP10147280 A JP 10147280A JP 10147280 A JP10147280 A JP 10147280A JP S5727489 A JPS5727489 A JP S5727489A
Authority
JP
Japan
Prior art keywords
signal
write
speed
terminating
address
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP10147280A
Other languages
English (en)
Other versions
JPS6027114B2 (ja
Inventor
Manabu Ando
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP55101472A priority Critical patent/JPS6027114B2/ja
Publication of JPS5727489A publication Critical patent/JPS5727489A/ja
Publication of JPS6027114B2 publication Critical patent/JPS6027114B2/ja
Expired legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Static Random-Access Memory (AREA)
JP55101472A 1980-07-24 1980-07-24 メモリ装置 Expired JPS6027114B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55101472A JPS6027114B2 (ja) 1980-07-24 1980-07-24 メモリ装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55101472A JPS6027114B2 (ja) 1980-07-24 1980-07-24 メモリ装置

Publications (2)

Publication Number Publication Date
JPS5727489A true JPS5727489A (en) 1982-02-13
JPS6027114B2 JPS6027114B2 (ja) 1985-06-27

Family

ID=14301663

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55101472A Expired JPS6027114B2 (ja) 1980-07-24 1980-07-24 メモリ装置

Country Status (1)

Country Link
JP (1) JPS6027114B2 (ja)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS593786A (ja) * 1982-06-30 1984-01-10 Fujitsu Ltd スタテイツク型半導体記憶装置
JPS6031800U (ja) * 1983-08-06 1985-03-04 富士通株式会社 カセット式磁気バブルメモリ装置
JPS6043296A (ja) * 1983-08-17 1985-03-07 Mitsubishi Electric Corp 半導体記憶装置
JPS6043295A (ja) * 1983-08-17 1985-03-07 Mitsubishi Electric Corp 半導体記憶装置
US4665507A (en) * 1984-04-20 1987-05-12 Hitachi, Ltd. Semiconductor memory having load devices controlled by a write signal
US4933905A (en) * 1987-08-13 1990-06-12 Kabushiki Kaisha Toshiba Semiconductor memory device for reducing power dissipation during a write operation
US5075891A (en) * 1987-11-27 1991-12-24 Sony Corporation Memory with a variable impedance bit line load circuit
US5226007A (en) * 1991-08-14 1993-07-06 Vlsi Technology, Inc. Automatic shutoff for memory load device during write operation

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS593786A (ja) * 1982-06-30 1984-01-10 Fujitsu Ltd スタテイツク型半導体記憶装置
JPS6313276B2 (ja) * 1982-06-30 1988-03-24 Fujitsu Ltd
JPS624959Y2 (ja) * 1983-08-06 1987-02-04
JPS6031800U (ja) * 1983-08-06 1985-03-04 富士通株式会社 カセット式磁気バブルメモリ装置
DE3430144A1 (de) 1983-08-17 1985-03-07 Mitsubishi Denki K.K., Tokio/Tokyo Halbleiter-speichereinrichtung
JPS6043295A (ja) * 1983-08-17 1985-03-07 Mitsubishi Electric Corp 半導体記憶装置
US4638461A (en) * 1983-08-17 1987-01-20 Mitsubishi Denki Kabushiki Kaisha Semiconductor memory device
JPS6043296A (ja) * 1983-08-17 1985-03-07 Mitsubishi Electric Corp 半導体記憶装置
US4644500A (en) * 1983-08-17 1987-02-17 Mitsubishi Denki Kabushiki Kaisha Semiconductor memory device with a controlled precharging arrangement
JPH0447397B2 (ja) * 1983-08-17 1992-08-03 Mitsubishi Electric Corp
US4665507A (en) * 1984-04-20 1987-05-12 Hitachi, Ltd. Semiconductor memory having load devices controlled by a write signal
US4933905A (en) * 1987-08-13 1990-06-12 Kabushiki Kaisha Toshiba Semiconductor memory device for reducing power dissipation during a write operation
US5075891A (en) * 1987-11-27 1991-12-24 Sony Corporation Memory with a variable impedance bit line load circuit
US5226007A (en) * 1991-08-14 1993-07-06 Vlsi Technology, Inc. Automatic shutoff for memory load device during write operation

Also Published As

Publication number Publication date
JPS6027114B2 (ja) 1985-06-27

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