JPS5726429A - Semiamorphous semiconductor - Google Patents

Semiamorphous semiconductor

Info

Publication number
JPS5726429A
JPS5726429A JP6582681A JP6582681A JPS5726429A JP S5726429 A JPS5726429 A JP S5726429A JP 6582681 A JP6582681 A JP 6582681A JP 6582681 A JP6582681 A JP 6582681A JP S5726429 A JPS5726429 A JP S5726429A
Authority
JP
Japan
Prior art keywords
semiconductor
crystal
unpaird
sih4
5mol
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6582681A
Other languages
Japanese (ja)
Inventor
Shunpei Yamazaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Priority to JP6582681A priority Critical patent/JPS5726429A/en
Publication of JPS5726429A publication Critical patent/JPS5726429A/en
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/24—Deposition of silicon only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02529—Silicon carbide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Photovoltaic Devices (AREA)

Abstract

PURPOSE:To obtain a semiconductor having strain of intermediate structure between crystal and amorphous, 10<-6>-10<-4>cm<-1> of dark conductivity of true semiconductor and 0.1-5mol% of H or halogen element to neutralize unpaird bond in the semiconductor by a thermal decomposition method due to glow discharge of SiH4. CONSTITUTION:When SiH4 is diluted with He, is glow discharged at 0.001- 10 Torr, its substrate is maintained at 400-600 deg.C and crystal is grown while emitting instantaneous light by Xenon lamp or the like, semiamorphous Si(SAS) of lattice strain of intermediate structure between crystal and amorphous can be obtained. When 0.1-5mol% of neutralizing H2 of halogen element is added thereto to neutralize the residual unpaird bond at the time of forming the SAS, the electric conductivity can be set at approx. 10<-6>-10<-4>cm<-1> in the true state. When Si3N4-x(0<x<4), SiO2-x(0<x<2) and SiCx(0<x<1) of prescribed compositions are simultaneously formed in the film, their energy band widths can be increased, the crystalline structure becomes near the single crystal, and its carrier diffusion reaches 0.5-100mum, and its photoelectric conversion efficiency is increased in a semiconductor film.
JP6582681A 1981-04-30 1981-04-30 Semiamorphous semiconductor Pending JPS5726429A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6582681A JPS5726429A (en) 1981-04-30 1981-04-30 Semiamorphous semiconductor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6582681A JPS5726429A (en) 1981-04-30 1981-04-30 Semiamorphous semiconductor

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP2638880A Division JPS56122123A (en) 1980-03-03 1980-03-03 Semiamorphous semiconductor

Publications (1)

Publication Number Publication Date
JPS5726429A true JPS5726429A (en) 1982-02-12

Family

ID=13298214

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6582681A Pending JPS5726429A (en) 1981-04-30 1981-04-30 Semiamorphous semiconductor

Country Status (1)

Country Link
JP (1) JPS5726429A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5983916A (en) * 1982-11-01 1984-05-15 Kanegafuchi Chem Ind Co Ltd Amorphous multielement semiconductor
JPH0597413A (en) * 1982-11-01 1993-04-20 Kanegafuchi Chem Ind Co Ltd Amorphous multicomponent semiconductor and device using the same

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
APPLIED PHYSICS LETTERS=1979 *
APPLIED PHYSICS LETTERS=1980 *
J. NON-CRYST. SOLIDS=1979 *

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5983916A (en) * 1982-11-01 1984-05-15 Kanegafuchi Chem Ind Co Ltd Amorphous multielement semiconductor
JPH0597413A (en) * 1982-11-01 1993-04-20 Kanegafuchi Chem Ind Co Ltd Amorphous multicomponent semiconductor and device using the same

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