JPS572570A - Triac - Google Patents

Triac

Info

Publication number
JPS572570A
JPS572570A JP7646780A JP7646780A JPS572570A JP S572570 A JPS572570 A JP S572570A JP 7646780 A JP7646780 A JP 7646780A JP 7646780 A JP7646780 A JP 7646780A JP S572570 A JPS572570 A JP S572570A
Authority
JP
Japan
Prior art keywords
layer
electrode
emitter
main surface
triac
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP7646780A
Other languages
Japanese (ja)
Other versions
JPS6122868B2 (en
Inventor
Kohei Matsuda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP7646780A priority Critical patent/JPS572570A/en
Publication of JPS572570A publication Critical patent/JPS572570A/en
Publication of JPS6122868B2 publication Critical patent/JPS6122868B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/747—Bidirectional devices, e.g. triacs

Abstract

PURPOSE:To enable the control of an alternating current bidirectionally with a positive gate signal of an ordinary magnitude by superposing the emitter layer at the gate electrode side of one main surface of a 5-layer triac on the emitter layer of the other main surface by the prescribed width. CONSTITUTION:The emitter electrode 4 at the gate electrode 5 side of an emitter electrode 8 at one main surface 2 side of a 5-layer triac and the emitter layer 6 of the other main surface side are superposed in the prescribed width L longer than twice the width Wn of the central base 1 in a planar manner. When the N-type emitters are thus disposed, holes injected from a P2 layer are stored as excessive carriers on an N1 layer in a mode with T1 electrode as (+), T1 electrode as (-) and G electrode as (+), the potential of the P1 layer is raised, the T1 electrode is forwardly biased, electrons from the N1 layer are accelerated in injection, and are turned ON. Thus, the alternating current can be controlled bidirectionally with positive gate signal of the ordinary magnitude.
JP7646780A 1980-06-06 1980-06-06 Triac Granted JPS572570A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7646780A JPS572570A (en) 1980-06-06 1980-06-06 Triac

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7646780A JPS572570A (en) 1980-06-06 1980-06-06 Triac

Publications (2)

Publication Number Publication Date
JPS572570A true JPS572570A (en) 1982-01-07
JPS6122868B2 JPS6122868B2 (en) 1986-06-03

Family

ID=13605965

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7646780A Granted JPS572570A (en) 1980-06-06 1980-06-06 Triac

Country Status (1)

Country Link
JP (1) JPS572570A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63199912U (en) * 1987-06-10 1988-12-22

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63199912U (en) * 1987-06-10 1988-12-22

Also Published As

Publication number Publication date
JPS6122868B2 (en) 1986-06-03

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