JPS5723216A - Manufacture of plasma reactor and semiconductor element - Google Patents

Manufacture of plasma reactor and semiconductor element

Info

Publication number
JPS5723216A
JPS5723216A JP9837480A JP9837480A JPS5723216A JP S5723216 A JPS5723216 A JP S5723216A JP 9837480 A JP9837480 A JP 9837480A JP 9837480 A JP9837480 A JP 9837480A JP S5723216 A JPS5723216 A JP S5723216A
Authority
JP
Japan
Prior art keywords
noncrystalline
film
varied
changing
manufacture
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP9837480A
Other languages
English (en)
Other versions
JPS6322057B2 (ja
Inventor
Shinichiro Ishihara
Masatoshi Kitagawa
Koshiro Mori
Tsuneo Tanaka
Seiichi Nagata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP9837480A priority Critical patent/JPS5723216A/ja
Publication of JPS5723216A publication Critical patent/JPS5723216A/ja
Publication of JPS6322057B2 publication Critical patent/JPS6322057B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/24—Deposition of silicon only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Photovoltaic Devices (AREA)
JP9837480A 1980-07-17 1980-07-17 Manufacture of plasma reactor and semiconductor element Granted JPS5723216A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9837480A JPS5723216A (en) 1980-07-17 1980-07-17 Manufacture of plasma reactor and semiconductor element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9837480A JPS5723216A (en) 1980-07-17 1980-07-17 Manufacture of plasma reactor and semiconductor element

Publications (2)

Publication Number Publication Date
JPS5723216A true JPS5723216A (en) 1982-02-06
JPS6322057B2 JPS6322057B2 (ja) 1988-05-10

Family

ID=14218098

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9837480A Granted JPS5723216A (en) 1980-07-17 1980-07-17 Manufacture of plasma reactor and semiconductor element

Country Status (1)

Country Link
JP (1) JPS5723216A (ja)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06291045A (ja) * 1992-06-29 1994-10-18 Nissin Electric Co Ltd シリコン膜の形成方法
US5686349A (en) * 1992-10-07 1997-11-11 Sharp Kabushiki Kaisha Fabrication of a thin film transistor and production of a liquid crystal display apparatus

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52140274A (en) * 1976-05-19 1977-11-22 Hitachi Ltd Pressure-reduction vapor growth method
JPS532076A (en) * 1976-06-29 1978-01-10 Fujitsu Ltd Equipment construction method for vapor-growth process

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52140274A (en) * 1976-05-19 1977-11-22 Hitachi Ltd Pressure-reduction vapor growth method
JPS532076A (en) * 1976-06-29 1978-01-10 Fujitsu Ltd Equipment construction method for vapor-growth process

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06291045A (ja) * 1992-06-29 1994-10-18 Nissin Electric Co Ltd シリコン膜の形成方法
US5686349A (en) * 1992-10-07 1997-11-11 Sharp Kabushiki Kaisha Fabrication of a thin film transistor and production of a liquid crystal display apparatus

Also Published As

Publication number Publication date
JPS6322057B2 (ja) 1988-05-10

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