JPS57211736A - Manufacture of silicon nitride film - Google Patents

Manufacture of silicon nitride film

Info

Publication number
JPS57211736A
JPS57211736A JP56097731A JP9773181A JPS57211736A JP S57211736 A JPS57211736 A JP S57211736A JP 56097731 A JP56097731 A JP 56097731A JP 9773181 A JP9773181 A JP 9773181A JP S57211736 A JPS57211736 A JP S57211736A
Authority
JP
Japan
Prior art keywords
mercury
reaction
gas
thin film
passivation layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56097731A
Other languages
English (en)
Japanese (ja)
Other versions
JPS647495B2 (enrdf_load_stackoverflow
Inventor
Seiichi Iwamatsu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Suwa Seikosha KK
Original Assignee
Seiko Epson Corp
Suwa Seikosha KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp, Suwa Seikosha KK filed Critical Seiko Epson Corp
Priority to JP56097731A priority Critical patent/JPS57211736A/ja
Publication of JPS57211736A publication Critical patent/JPS57211736A/ja
Publication of JPS647495B2 publication Critical patent/JPS647495B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/0217—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Formation Of Insulating Films (AREA)
JP56097731A 1981-06-24 1981-06-24 Manufacture of silicon nitride film Granted JPS57211736A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56097731A JPS57211736A (en) 1981-06-24 1981-06-24 Manufacture of silicon nitride film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56097731A JPS57211736A (en) 1981-06-24 1981-06-24 Manufacture of silicon nitride film

Publications (2)

Publication Number Publication Date
JPS57211736A true JPS57211736A (en) 1982-12-25
JPS647495B2 JPS647495B2 (enrdf_load_stackoverflow) 1989-02-09

Family

ID=14200031

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56097731A Granted JPS57211736A (en) 1981-06-24 1981-06-24 Manufacture of silicon nitride film

Country Status (1)

Country Link
JP (1) JPS57211736A (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59215732A (ja) * 1983-05-24 1984-12-05 Semiconductor Energy Lab Co Ltd 窒化珪素被膜作製方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59215732A (ja) * 1983-05-24 1984-12-05 Semiconductor Energy Lab Co Ltd 窒化珪素被膜作製方法

Also Published As

Publication number Publication date
JPS647495B2 (enrdf_load_stackoverflow) 1989-02-09

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