JPS57208127A - Manufacture of semiconductor - Google Patents

Manufacture of semiconductor

Info

Publication number
JPS57208127A
JPS57208127A JP56094739A JP9473981A JPS57208127A JP S57208127 A JPS57208127 A JP S57208127A JP 56094739 A JP56094739 A JP 56094739A JP 9473981 A JP9473981 A JP 9473981A JP S57208127 A JPS57208127 A JP S57208127A
Authority
JP
Japan
Prior art keywords
substrate
silicon
vapor
thermoelectrons
single crystal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56094739A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6158968B2 (enrdf_load_stackoverflow
Inventor
Yoshiyuki Fukumoto
Yoji Kono
Masahiro Hotta
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sekisui Chemical Co Ltd
Original Assignee
Sekisui Chemical Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sekisui Chemical Co Ltd filed Critical Sekisui Chemical Co Ltd
Priority to JP56094739A priority Critical patent/JPS57208127A/ja
Publication of JPS57208127A publication Critical patent/JPS57208127A/ja
Publication of JPS6158968B2 publication Critical patent/JPS6158968B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/32—Vacuum evaporation by explosion; by evaporation and subsequent ionisation of the vapours, e.g. ion-plating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Photovoltaic Devices (AREA)
JP56094739A 1981-06-18 1981-06-18 Manufacture of semiconductor Granted JPS57208127A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56094739A JPS57208127A (en) 1981-06-18 1981-06-18 Manufacture of semiconductor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56094739A JPS57208127A (en) 1981-06-18 1981-06-18 Manufacture of semiconductor

Publications (2)

Publication Number Publication Date
JPS57208127A true JPS57208127A (en) 1982-12-21
JPS6158968B2 JPS6158968B2 (enrdf_load_stackoverflow) 1986-12-13

Family

ID=14118479

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56094739A Granted JPS57208127A (en) 1981-06-18 1981-06-18 Manufacture of semiconductor

Country Status (1)

Country Link
JP (1) JPS57208127A (enrdf_load_stackoverflow)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6230315A (ja) * 1985-07-31 1987-02-09 Anelva Corp 電子銃装置
JPS62229844A (ja) * 1986-03-31 1987-10-08 Toshiba Corp 薄膜堆積方法
US5633194A (en) * 1995-04-18 1997-05-27 The University Of Waterloo Low temperature ion-beam assisted deposition methods for realizing SiGe/Si heterostructure

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6230315A (ja) * 1985-07-31 1987-02-09 Anelva Corp 電子銃装置
JPS62229844A (ja) * 1986-03-31 1987-10-08 Toshiba Corp 薄膜堆積方法
US5633194A (en) * 1995-04-18 1997-05-27 The University Of Waterloo Low temperature ion-beam assisted deposition methods for realizing SiGe/Si heterostructure

Also Published As

Publication number Publication date
JPS6158968B2 (enrdf_load_stackoverflow) 1986-12-13

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