JPS5594472A - Forming method for coating - Google Patents
Forming method for coatingInfo
- Publication number
- JPS5594472A JPS5594472A JP164779A JP164779A JPS5594472A JP S5594472 A JPS5594472 A JP S5594472A JP 164779 A JP164779 A JP 164779A JP 164779 A JP164779 A JP 164779A JP S5594472 A JPS5594472 A JP S5594472A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- source
- power source
- electron radiation
- thermal electron
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/32—Vacuum evaporation by explosion; by evaporation and subsequent ionisation of the vapours, e.g. ion-plating
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Abstract
PURPOSE:To promote the ionization efficiency and to eliminate the restriction of substrate arrangement, by arranging plural negative biased filament for thermal electron radiation on the side face of relatively positive potential substrate, etc. and ionizing evaporated metal particles by thermal cathode discharge formation. CONSTITUTION:The negative biased substrate against earthed potential by the power source 15 or substrate support part 5, is arranged facing against the evaporation source 3 connected with the power source 13 in the vacuum room 1 provided with the exhaust gas opening 2, the inactive gas feeding valve 4. Plural filaments for thermal electron radiation 6 heated by the power source 16-B, is arranged near the substrate 5 and it is constructed so as to be enabled to apply negative bias based on the substrate voltage by the power source 16-A. Thermal electron radiation by the source 16-B, is accelerated and is run against the substrate 5 having positive potential relatively by applying by the source 16-A and then, is ionized. Furthermore, cathode pole discharge is formed between the filament 6 and the substrate 5 and vaporized metal particles from the source 3 are ionized effectively. As a result of it, it is unnecessary to arrange the substrate just above etc. the ionization mechanism as usual method.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP164779A JPS5594472A (en) | 1979-01-09 | 1979-01-09 | Forming method for coating |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP164779A JPS5594472A (en) | 1979-01-09 | 1979-01-09 | Forming method for coating |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5594472A true JPS5594472A (en) | 1980-07-17 |
Family
ID=11507302
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP164779A Pending JPS5594472A (en) | 1979-01-09 | 1979-01-09 | Forming method for coating |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5594472A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2544746A1 (en) * | 1983-04-22 | 1984-10-26 | White Eng Corp | PURE IONIC PLATING PROCESS USING MAGNETIC FIELDS |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4955573A (en) * | 1972-10-03 | 1974-05-29 | ||
JPS52149275A (en) * | 1976-06-07 | 1977-12-12 | Tsuneo Nishida | Casing parts for golden colored portable articles |
JPS5322166A (en) * | 1976-08-12 | 1978-03-01 | Tsuneo Nishida | Apparatus and process for ionic plating of hottcathode discharge type |
-
1979
- 1979-01-09 JP JP164779A patent/JPS5594472A/en active Pending
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4955573A (en) * | 1972-10-03 | 1974-05-29 | ||
JPS52149275A (en) * | 1976-06-07 | 1977-12-12 | Tsuneo Nishida | Casing parts for golden colored portable articles |
JPS5322166A (en) * | 1976-08-12 | 1978-03-01 | Tsuneo Nishida | Apparatus and process for ionic plating of hottcathode discharge type |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2544746A1 (en) * | 1983-04-22 | 1984-10-26 | White Eng Corp | PURE IONIC PLATING PROCESS USING MAGNETIC FIELDS |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US3046936A (en) | Improvement in vacuum coating apparatus comprising an ion trap for the electron gun thereof | |
JPH0568545B2 (en) | ||
AU5022496A (en) | An electron jet vapor deposition system | |
SE8700017D0 (en) | ION PLASMA ELECTRON GUN | |
JPS5594472A (en) | Forming method for coating | |
JPS56127935A (en) | Production of magnetic recording medium | |
JPS5489983A (en) | Device and method for vacuum deposition compound | |
JPS6324068A (en) | Continuous vacuum deposition plating device | |
JPS5668932A (en) | Manufacture of magnetic recording medium | |
JPS594045Y2 (en) | Ionization device for thin film production | |
JPS55152177A (en) | Ion beam deposition equipment | |
JPH089776B2 (en) | Ion plating method and apparatus | |
JPS57208127A (en) | Manufacture of semiconductor | |
JP2569913Y2 (en) | Ion implanter | |
JP3431174B2 (en) | Substrate coating equipment | |
JPS57208126A (en) | Manufacture of semiconductor | |
JPS57161059A (en) | Film forming device | |
JPS5744230A (en) | Production of magnetic recording medium | |
JPS6254076A (en) | Ion plating device | |
JPS57171666A (en) | Thin film vapor-deposition device | |
JPH01255663A (en) | Method and device for vacuum deposition | |
SU1267819A1 (en) | METHOD OF APPLYING COATINGS IN A VACUUM | |
JPS56100126A (en) | Manufacture of amorphous silicon | |
JPS63282257A (en) | Ion plating device | |
JPS59142841A (en) | Vapor deposition device |