JPS5594472A - Forming method for coating - Google Patents

Forming method for coating

Info

Publication number
JPS5594472A
JPS5594472A JP164779A JP164779A JPS5594472A JP S5594472 A JPS5594472 A JP S5594472A JP 164779 A JP164779 A JP 164779A JP 164779 A JP164779 A JP 164779A JP S5594472 A JPS5594472 A JP S5594472A
Authority
JP
Japan
Prior art keywords
substrate
source
power source
electron radiation
thermal electron
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP164779A
Other languages
Japanese (ja)
Inventor
Toshimitsu Shirota
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Citizen Watch Co Ltd
Original Assignee
Citizen Watch Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Citizen Watch Co Ltd filed Critical Citizen Watch Co Ltd
Priority to JP164779A priority Critical patent/JPS5594472A/en
Publication of JPS5594472A publication Critical patent/JPS5594472A/en
Pending legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24Vacuum evaporation
    • C23C14/32Vacuum evaporation by explosion; by evaporation and subsequent ionisation of the vapours, e.g. ion-plating

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

PURPOSE:To promote the ionization efficiency and to eliminate the restriction of substrate arrangement, by arranging plural negative biased filament for thermal electron radiation on the side face of relatively positive potential substrate, etc. and ionizing evaporated metal particles by thermal cathode discharge formation. CONSTITUTION:The negative biased substrate against earthed potential by the power source 15 or substrate support part 5, is arranged facing against the evaporation source 3 connected with the power source 13 in the vacuum room 1 provided with the exhaust gas opening 2, the inactive gas feeding valve 4. Plural filaments for thermal electron radiation 6 heated by the power source 16-B, is arranged near the substrate 5 and it is constructed so as to be enabled to apply negative bias based on the substrate voltage by the power source 16-A. Thermal electron radiation by the source 16-B, is accelerated and is run against the substrate 5 having positive potential relatively by applying by the source 16-A and then, is ionized. Furthermore, cathode pole discharge is formed between the filament 6 and the substrate 5 and vaporized metal particles from the source 3 are ionized effectively. As a result of it, it is unnecessary to arrange the substrate just above etc. the ionization mechanism as usual method.
JP164779A 1979-01-09 1979-01-09 Forming method for coating Pending JPS5594472A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP164779A JPS5594472A (en) 1979-01-09 1979-01-09 Forming method for coating

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP164779A JPS5594472A (en) 1979-01-09 1979-01-09 Forming method for coating

Publications (1)

Publication Number Publication Date
JPS5594472A true JPS5594472A (en) 1980-07-17

Family

ID=11507302

Family Applications (1)

Application Number Title Priority Date Filing Date
JP164779A Pending JPS5594472A (en) 1979-01-09 1979-01-09 Forming method for coating

Country Status (1)

Country Link
JP (1) JPS5594472A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2544746A1 (en) * 1983-04-22 1984-10-26 White Eng Corp PURE IONIC PLATING PROCESS USING MAGNETIC FIELDS

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4955573A (en) * 1972-10-03 1974-05-29
JPS52149275A (en) * 1976-06-07 1977-12-12 Tsuneo Nishida Casing parts for golden colored portable articles
JPS5322166A (en) * 1976-08-12 1978-03-01 Tsuneo Nishida Apparatus and process for ionic plating of hottcathode discharge type

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4955573A (en) * 1972-10-03 1974-05-29
JPS52149275A (en) * 1976-06-07 1977-12-12 Tsuneo Nishida Casing parts for golden colored portable articles
JPS5322166A (en) * 1976-08-12 1978-03-01 Tsuneo Nishida Apparatus and process for ionic plating of hottcathode discharge type

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2544746A1 (en) * 1983-04-22 1984-10-26 White Eng Corp PURE IONIC PLATING PROCESS USING MAGNETIC FIELDS

Similar Documents

Publication Publication Date Title
US3046936A (en) Improvement in vacuum coating apparatus comprising an ion trap for the electron gun thereof
JPH0568545B2 (en)
AU5022496A (en) An electron jet vapor deposition system
SE8700017D0 (en) ION PLASMA ELECTRON GUN
JPS5594472A (en) Forming method for coating
JPS56127935A (en) Production of magnetic recording medium
JPS5489983A (en) Device and method for vacuum deposition compound
JPS6324068A (en) Continuous vacuum deposition plating device
JPS5668932A (en) Manufacture of magnetic recording medium
JPS594045Y2 (en) Ionization device for thin film production
JPS55152177A (en) Ion beam deposition equipment
JPH089776B2 (en) Ion plating method and apparatus
JPS57208127A (en) Manufacture of semiconductor
JP2569913Y2 (en) Ion implanter
JP3431174B2 (en) Substrate coating equipment
JPS57208126A (en) Manufacture of semiconductor
JPS57161059A (en) Film forming device
JPS5744230A (en) Production of magnetic recording medium
JPS6254076A (en) Ion plating device
JPS57171666A (en) Thin film vapor-deposition device
JPH01255663A (en) Method and device for vacuum deposition
SU1267819A1 (en) METHOD OF APPLYING COATINGS IN A VACUUM
JPS56100126A (en) Manufacture of amorphous silicon
JPS63282257A (en) Ion plating device
JPS59142841A (en) Vapor deposition device