JPS57207492A - Forming method for organic high polymer resin pattern - Google Patents

Forming method for organic high polymer resin pattern

Info

Publication number
JPS57207492A
JPS57207492A JP56092298A JP9229881A JPS57207492A JP S57207492 A JPS57207492 A JP S57207492A JP 56092298 A JP56092298 A JP 56092298A JP 9229881 A JP9229881 A JP 9229881A JP S57207492 A JPS57207492 A JP S57207492A
Authority
JP
Japan
Prior art keywords
pattern
pgma
film
substrate
optical absorbent
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP56092298A
Other languages
Japanese (ja)
Inventor
Toshio Nakano
Michiaki Hashimoto
Ken Tsutsui
Akira Sasano
Toshihisa Tsukada
Morio Taniguchi
Tadao Kaneko
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP56092298A priority Critical patent/JPS57207492A/en
Publication of JPS57207492A publication Critical patent/JPS57207492A/en
Pending legal-status Critical Current

Links

Landscapes

  • Color Television Image Signal Generators (AREA)
  • Polymerisation Methods In General (AREA)
  • Solid State Image Pick-Up Elements (AREA)

Abstract

PURPOSE: To form a minute pattern without pattern deforming, by performing heat processing after impregnating an optical absorbent to a radiant ray sensitive organic high polymer resin, in forming a filter with a prescribed pattern on a substrate of a solid-state image pickup element.
CONSTITUTION: In a solid-state image pickup element substrate 1, a photdetecting section, its accessory circuit and external lead 8 are formed on the substrate. A PGMA solution is coated on the substrate 1 to form a PGMA film as an organic resin film. The organic resin film is heated at 200°C for 30min. and the PGMA film is thermally cross-linked. Exposure is made with ultraviolet rays and the pattern of the PGMA film is formed by drying after the processing with a development liquid. An optical absorbent is impregnated in the PGMA film in a solution containing the optical absorbent at 60°C for 4min. The solution is quickly exhausted and the objective is dried to form the PGMA pattern containing the optical absorbent. Further, heat processing at 200°C for 15min. is performed. Thus, a color filter having a prescribed pattern can be obtained on the PGMA film 5 without deformed pattern.
COPYRIGHT: (C)1982,JPO&Japio
JP56092298A 1981-06-17 1981-06-17 Forming method for organic high polymer resin pattern Pending JPS57207492A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56092298A JPS57207492A (en) 1981-06-17 1981-06-17 Forming method for organic high polymer resin pattern

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56092298A JPS57207492A (en) 1981-06-17 1981-06-17 Forming method for organic high polymer resin pattern

Publications (1)

Publication Number Publication Date
JPS57207492A true JPS57207492A (en) 1982-12-20

Family

ID=14050499

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56092298A Pending JPS57207492A (en) 1981-06-17 1981-06-17 Forming method for organic high polymer resin pattern

Country Status (1)

Country Link
JP (1) JPS57207492A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59109159U (en) * 1983-01-13 1984-07-23 ソニー株式会社 solid-state image sensor

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59109159U (en) * 1983-01-13 1984-07-23 ソニー株式会社 solid-state image sensor

Similar Documents

Publication Publication Date Title
JPS5764734A (en) Photosensitive resin composition and photosensitive element
JPS5621335A (en) Manufacture of semiconductor device
CN100435318C (en) Method for manufacturing of CMOS image sensor
JPS5569265A (en) Pattern-forming method
EP0359497A3 (en) An exposure method
JPS57207492A (en) Forming method for organic high polymer resin pattern
US4352878A (en) Photoresist composition
KR880004351A (en) Manufacturing method of heat resistance forming layer
US4430400A (en) Method of producing color filters using dehydrating solution
JP2604890B2 (en) Method for manufacturing solid-state imaging device
KR100334338B1 (en) Photo Solder Resist drying method of Printed Circuit Board
JPS55164825A (en) Polymer positive image forming method
JPS5915418A (en) Photopolymer
EP0396254A3 (en) Photosensitive composition and pattern formation method using the same
JPS57146123A (en) Infrared detector
JPS5520317A (en) Forming method of selective-absorbing film
JPS5585027A (en) Method of fabricating semiconductor device
JPS5476066A (en) Pattern forming method
JPS55157736A (en) Ionized radiation sensitive negative type resist
JPS5525067A (en) Production of color stripe filter
JPS5688135A (en) Developer
JPS5546719A (en) Production of orientation control film
JPS57207338A (en) Method for treating resist film for electron beam
JPS57173873A (en) Moisture proof treatment of phase hologram
RU1818716C (en) Method of moisture-proofing of printed circuit boards