JPS59109159U - solid-state image sensor - Google Patents

solid-state image sensor

Info

Publication number
JPS59109159U
JPS59109159U JP284983U JP284983U JPS59109159U JP S59109159 U JPS59109159 U JP S59109159U JP 284983 U JP284983 U JP 284983U JP 284983 U JP284983 U JP 284983U JP S59109159 U JPS59109159 U JP S59109159U
Authority
JP
Japan
Prior art keywords
solid
state image
image sensor
chip
filter
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP284983U
Other languages
Japanese (ja)
Inventor
秋山　克彦
山内　清志
秀幸 高橋
松村　喜寿
Original Assignee
ソニー株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ソニー株式会社 filed Critical ソニー株式会社
Priority to JP284983U priority Critical patent/JPS59109159U/en
Publication of JPS59109159U publication Critical patent/JPS59109159U/en
Pending legal-status Critical Current

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  • Solid State Image Pick-Up Elements (AREA)

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

【図面の簡単な説明】[Brief explanation of the drawing]

第１図〜第３図は従来の不都合を説明するための断面図
、第４図は同様の平面図、第５図はこの考案の一実施例
を示す平面図、第６図は同様の断面図、第７図はこの考
案の説明に供するグラフで　　　−ある。 １４はセンサ部、１６はカラーエレメント、１８はフォ
トシールド層、１９．２０は転送電極、２１は透明有機
絶縁物である。 第４図 第６図 ＋１１ Ｌ−ＮＩ　　　　　　　　　　ｔ３Figures 1 to 3 are sectional views for explaining the conventional disadvantages, Figure 4 is a similar plan view, Figure 5 is a plan view showing an embodiment of this invention, and Figure 6 is a similar sectional view. Figure 7 is a graph used to explain this invention. 14 is a sensor section, 16 is a color element, 18 is a photoshield layer, 19.20 is a transfer electrode, and 21 is a transparent organic insulator. Figure 4 Figure 6 +11 L-NI t3

Claims (1)

【実用新案登録請求の範囲】[Scope of utility model registration request] 固体撮像素子本体をなすチップと、このチップ前面に一
体に配されるフィルタと、上記チップおよびフィルタの
間に配される充填層とを有し、上記充填層が上記フィル
タ形成用の露光光源の光を吸収するよう杏子した固体撮
像素子。　　　　゛The solid-state image sensing device has a chip that constitutes a main body, a filter that is integrally arranged on the front surface of the chip, and a filling layer that is arranged between the chip and the filter, and the filling layer is used as an exposure light source for forming the filter. A solid-state image sensor that absorbs light.゛
JP284983U 1983-01-13 1983-01-13 solid-state image sensor Pending JPS59109159U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP284983U JPS59109159U (en) 1983-01-13 1983-01-13 solid-state image sensor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP284983U JPS59109159U (en) 1983-01-13 1983-01-13 solid-state image sensor

Publications (1)

Publication Number Publication Date
JPS59109159U true JPS59109159U (en) 1984-07-23

Family

ID=30134497

Family Applications (1)

Application Number Title Priority Date Filing Date
JP284983U Pending JPS59109159U (en) 1983-01-13 1983-01-13 solid-state image sensor

Country Status (1)

Country Link
JP (1) JPS59109159U (en)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57207492A (en) * 1981-06-17 1982-12-20 Hitachi Ltd Forming method for organic high polymer resin pattern

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57207492A (en) * 1981-06-17 1982-12-20 Hitachi Ltd Forming method for organic high polymer resin pattern

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