JPS57206045A - Method for checking silicon wafer - Google Patents

Method for checking silicon wafer

Info

Publication number
JPS57206045A
JPS57206045A JP9132481A JP9132481A JPS57206045A JP S57206045 A JPS57206045 A JP S57206045A JP 9132481 A JP9132481 A JP 9132481A JP 9132481 A JP9132481 A JP 9132481A JP S57206045 A JPS57206045 A JP S57206045A
Authority
JP
Japan
Prior art keywords
wafer
defects
infrared rays
transmitted
transmitted amount
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9132481A
Other languages
Japanese (ja)
Inventor
Masamichi Yoshida
Atsuo Iida
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP9132481A priority Critical patent/JPS57206045A/en
Publication of JPS57206045A publication Critical patent/JPS57206045A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)

Abstract

PURPOSE:To check the number of defects in the wafer by a non-destructive method readily by irradiating infrared rays on the wafer wherein the defects are yielded, and detecting the transmitted amount of the infrared rays which are transmitted through the wafer. CONSTITUTION:The Si wafer 3 is mounted on the sample mounting table of a double beam type infrared spectrophotometer 1 wherein wavelength is varied, e.g. in the range of 5-25mum. The defects 2 are imparted to the Si wafer 3 by the impact of the fine powder of SiO2 blown by a sand blasting method. The infrared rays are irradiated to the Si wafer 3 as shown by an arrow. The transmitted amount of the infrared rays from the Si wafer 3 is measured by an amplifier and the like which are built in the spectrophotometer 1 at a specified wavelength. The more the defects, i.e. the larger the impact, the larger the transmitted amount decreases.
JP9132481A 1981-06-12 1981-06-12 Method for checking silicon wafer Pending JPS57206045A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9132481A JPS57206045A (en) 1981-06-12 1981-06-12 Method for checking silicon wafer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9132481A JPS57206045A (en) 1981-06-12 1981-06-12 Method for checking silicon wafer

Publications (1)

Publication Number Publication Date
JPS57206045A true JPS57206045A (en) 1982-12-17

Family

ID=14023269

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9132481A Pending JPS57206045A (en) 1981-06-12 1981-06-12 Method for checking silicon wafer

Country Status (1)

Country Link
JP (1) JPS57206045A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6050936A (en) * 1983-08-30 1985-03-22 Fujitsu Ltd Method of evaluating composition distribution of compound semiconductor crystal
JPS60148137A (en) * 1984-01-13 1985-08-05 Nec Corp Appreciation for crystallinity of surface of single crystal semiconductor
US5270222A (en) * 1990-12-31 1993-12-14 Texas Instruments Incorporated Method and apparatus for semiconductor device fabrication diagnosis and prognosis

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55150248A (en) * 1979-05-10 1980-11-22 Nec Corp Method of evaluating strain of semiconductor wafer

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55150248A (en) * 1979-05-10 1980-11-22 Nec Corp Method of evaluating strain of semiconductor wafer

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6050936A (en) * 1983-08-30 1985-03-22 Fujitsu Ltd Method of evaluating composition distribution of compound semiconductor crystal
JPS6337501B2 (en) * 1983-08-30 1988-07-26 Fujitsu Ltd
JPS60148137A (en) * 1984-01-13 1985-08-05 Nec Corp Appreciation for crystallinity of surface of single crystal semiconductor
US5270222A (en) * 1990-12-31 1993-12-14 Texas Instruments Incorporated Method and apparatus for semiconductor device fabrication diagnosis and prognosis
US5719495A (en) * 1990-12-31 1998-02-17 Texas Instruments Incorporated Apparatus for semiconductor device fabrication diagnosis and prognosis

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