JPS55150248A - Method of evaluating strain of semiconductor wafer - Google Patents

Method of evaluating strain of semiconductor wafer

Info

Publication number
JPS55150248A
JPS55150248A JP5726579A JP5726579A JPS55150248A JP S55150248 A JPS55150248 A JP S55150248A JP 5726579 A JP5726579 A JP 5726579A JP 5726579 A JP5726579 A JP 5726579A JP S55150248 A JPS55150248 A JP S55150248A
Authority
JP
Japan
Prior art keywords
strain
light
semiconductor wafer
strained
wafer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5726579A
Other languages
Japanese (ja)
Inventor
Hideki Tsuya
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP5726579A priority Critical patent/JPS55150248A/en
Publication of JPS55150248A publication Critical patent/JPS55150248A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Investigating Or Analysing Materials By Optical Means (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)

Abstract

PURPOSE:To easily evaluate quantitatively a semiconductor wafer without contamination by irradiating laser light to strained surface and measuring the reflected light as a method of evaluating the strain formed at the wafer for absorbing the infinitesimal fault in the wafer. CONSTITUTION:Laser light 2 from an Ar iron laser tube 1 is irradiated through a half mirror 7 on the strained surface of a semiconductor wafer 3 formed with a strain for absorbing infinitesimal fault on the back surface. Since the light 2 is linearly polarized at this time, it is incident at 1 deg. 15' to eliminate the adverse affect thereof, and the stability of the light 2 is confirmed by a monitor 8 using the reflected light from the mirror 7. Then, the reflected light 4 from the strained surface is received by a solar battery 5, the output from the battery 5 is measured by an ammeter 6 to detect the strained state. Thus, the current value obtained from the ammeter 6 is preferably responded to the number of the faults on the laminate showing the degree of the strain to enable evaluation of the strain by the current value.
JP5726579A 1979-05-10 1979-05-10 Method of evaluating strain of semiconductor wafer Pending JPS55150248A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5726579A JPS55150248A (en) 1979-05-10 1979-05-10 Method of evaluating strain of semiconductor wafer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5726579A JPS55150248A (en) 1979-05-10 1979-05-10 Method of evaluating strain of semiconductor wafer

Publications (1)

Publication Number Publication Date
JPS55150248A true JPS55150248A (en) 1980-11-22

Family

ID=13050688

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5726579A Pending JPS55150248A (en) 1979-05-10 1979-05-10 Method of evaluating strain of semiconductor wafer

Country Status (1)

Country Link
JP (1) JPS55150248A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57206045A (en) * 1981-06-12 1982-12-17 Fujitsu Ltd Method for checking silicon wafer
JPH01211937A (en) * 1988-02-18 1989-08-25 Mitsubishi Metal Corp Evaluation of strength of damage to wafer with distortion

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5298466A (en) * 1976-02-13 1977-08-18 Hitachi Ltd Measuring apparatus for lattice defects

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5298466A (en) * 1976-02-13 1977-08-18 Hitachi Ltd Measuring apparatus for lattice defects

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57206045A (en) * 1981-06-12 1982-12-17 Fujitsu Ltd Method for checking silicon wafer
JPH01211937A (en) * 1988-02-18 1989-08-25 Mitsubishi Metal Corp Evaluation of strength of damage to wafer with distortion

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