JPS5796241A - Method and device for measuring density of impurity in semiconductor - Google Patents

Method and device for measuring density of impurity in semiconductor

Info

Publication number
JPS5796241A
JPS5796241A JP17303380A JP17303380A JPS5796241A JP S5796241 A JPS5796241 A JP S5796241A JP 17303380 A JP17303380 A JP 17303380A JP 17303380 A JP17303380 A JP 17303380A JP S5796241 A JPS5796241 A JP S5796241A
Authority
JP
Japan
Prior art keywords
sample
monochromatic lights
intermediary
mirror
constitution
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP17303380A
Other languages
Japanese (ja)
Inventor
Kuninori Kitahara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP17303380A priority Critical patent/JPS5796241A/en
Publication of JPS5796241A publication Critical patent/JPS5796241A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/94—Investigating contamination, e.g. dust

Landscapes

  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Investigating, Analyzing Materials By Fluorescence Or Luminescence (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)

Abstract

PURPOSE:To enable efficient measurement of the distribution of the density of impurities and defects within the surface of a sample to be measured by a method wherein radiating rays from the sample are separated into a plurality of monochromatic lights and outputs of detection thereof are recorded simultaneously by a multipen recorder. CONSTITUTION:When an exciting light 4 from an exciting light source 3 is applied on the surface of the sample 1 through the intermediary of a mirror 5, the radiating rays 6 are generated from the sample 1. These radiating rays 6 are focused by a lens 7 to fall on a spectroscope 8 and are reflected by a mirror 9 to fall on a diffraction grating 10, where they are separated into monochromatic lights 11, 11' and 11'' having different wavelengths. After being detected by a photodiode-array 12, the monochromatic lights 11, 11' and 11'' are delivered to the multipen recorder 14 through the intermediary of a signal processing circuit 13 and there the changes in the relative luminous strength of the monochromatic lights according to their positions within the surface of the sample 1 are recorded simultaneously. By this constitution, a plurality of curves of the luminous strength are obtained in a short time, whereby troubles such as repeated scanning of the surface of the sample can be eliminated.
JP17303380A 1980-12-08 1980-12-08 Method and device for measuring density of impurity in semiconductor Pending JPS5796241A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17303380A JPS5796241A (en) 1980-12-08 1980-12-08 Method and device for measuring density of impurity in semiconductor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17303380A JPS5796241A (en) 1980-12-08 1980-12-08 Method and device for measuring density of impurity in semiconductor

Publications (1)

Publication Number Publication Date
JPS5796241A true JPS5796241A (en) 1982-06-15

Family

ID=15952946

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17303380A Pending JPS5796241A (en) 1980-12-08 1980-12-08 Method and device for measuring density of impurity in semiconductor

Country Status (1)

Country Link
JP (1) JPS5796241A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63121732A (en) * 1986-11-11 1988-05-25 Nippon Telegr & Teleph Corp <Ntt> Cathode luminescence measuring instrument
JPH0231175A (en) * 1988-07-20 1990-02-01 Hamamatsu Photonics Kk Device due to luminescence and apparatus for evaluating material thereof
WO2001020662A1 (en) * 1999-09-10 2001-03-22 Nikko Materials Co., Ltd. Device for mapping composition ratio of specific element which compound semiconductor wafer contains
JP2009088547A (en) * 2008-12-01 2009-04-23 Central Res Inst Of Electric Power Ind Method and device for inspecting silicon carbide semiconductor device, and method for manufacturing the silicon carbide semiconductor device

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63121732A (en) * 1986-11-11 1988-05-25 Nippon Telegr & Teleph Corp <Ntt> Cathode luminescence measuring instrument
JPH0231175A (en) * 1988-07-20 1990-02-01 Hamamatsu Photonics Kk Device due to luminescence and apparatus for evaluating material thereof
WO2001020662A1 (en) * 1999-09-10 2001-03-22 Nikko Materials Co., Ltd. Device for mapping composition ratio of specific element which compound semiconductor wafer contains
JP2009088547A (en) * 2008-12-01 2009-04-23 Central Res Inst Of Electric Power Ind Method and device for inspecting silicon carbide semiconductor device, and method for manufacturing the silicon carbide semiconductor device

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