JPS57201028A - Wafer conveying device - Google Patents

Wafer conveying device

Info

Publication number
JPS57201028A
JPS57201028A JP8557581A JP8557581A JPS57201028A JP S57201028 A JPS57201028 A JP S57201028A JP 8557581 A JP8557581 A JP 8557581A JP 8557581 A JP8557581 A JP 8557581A JP S57201028 A JPS57201028 A JP S57201028A
Authority
JP
Japan
Prior art keywords
chains
wafer conveying
rotor
arm
conveying device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP8557581A
Other languages
Japanese (ja)
Other versions
JPS64810B2 (en
Inventor
Masaaki Minami
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP8557581A priority Critical patent/JPS57201028A/en
Publication of JPS57201028A publication Critical patent/JPS57201028A/en
Publication of JPS64810B2 publication Critical patent/JPS64810B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67763—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading
    • H01L21/67778—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading involving loading and unloading of wafers
    • H01L21/67781—Batch transfer of wafers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67763—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading
    • H01L21/67766—Mechanical parts of transfer devices

Abstract

PURPOSE:To improve the treating efficiency of a wafer conveying device by providing a wafer conveying mechanism of a simple structre using a single power source, thereby facilitating check and maintenance and stabilizing the operation. CONSTITUTION:This device has chains 3, 4 extended in parallel with each other, an electromagnetic clutch 9 interposed between the drive shafts of the chains, a motor 10 connected to the chains, a slide member 12 supported by a guide shaft 11, and a treating tank 2 provided in the chain direction. A rotor 16 is provided at one end of the member 12. Means 17 for converting the rotating motion of the rotor 16 to elevational motions and an arm 18 for holding wafers are provided at the member 12, the arm 18 is elevationally moved by the motion conversion, thereby facilitating the treatment with a simple conveying mechanism.
JP8557581A 1981-06-05 1981-06-05 Wafer conveying device Granted JPS57201028A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8557581A JPS57201028A (en) 1981-06-05 1981-06-05 Wafer conveying device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8557581A JPS57201028A (en) 1981-06-05 1981-06-05 Wafer conveying device

Publications (2)

Publication Number Publication Date
JPS57201028A true JPS57201028A (en) 1982-12-09
JPS64810B2 JPS64810B2 (en) 1989-01-09

Family

ID=13862607

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8557581A Granted JPS57201028A (en) 1981-06-05 1981-06-05 Wafer conveying device

Country Status (1)

Country Link
JP (1) JPS57201028A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59127838A (en) * 1983-01-11 1984-07-23 Sumitomo Electric Ind Ltd Continuous etching device for mirror wafer
JPS61153340U (en) * 1985-03-13 1986-09-22
JPS63260037A (en) * 1987-04-16 1988-10-27 Nec Kyushu Ltd Semiconductor substrate automatic chemical treatment apparatus
JPH022112A (en) * 1987-12-17 1990-01-08 Texas Instr Inc <Ti> Method and apparatus of treatment of semiconductor wafer

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59127838A (en) * 1983-01-11 1984-07-23 Sumitomo Electric Ind Ltd Continuous etching device for mirror wafer
JPH0148651B2 (en) * 1983-01-11 1989-10-20 Sumitomo Electric Industries
JPS61153340U (en) * 1985-03-13 1986-09-22
JPH058675Y2 (en) * 1985-03-13 1993-03-04
JPS63260037A (en) * 1987-04-16 1988-10-27 Nec Kyushu Ltd Semiconductor substrate automatic chemical treatment apparatus
JPH022112A (en) * 1987-12-17 1990-01-08 Texas Instr Inc <Ti> Method and apparatus of treatment of semiconductor wafer

Also Published As

Publication number Publication date
JPS64810B2 (en) 1989-01-09

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