JPS57199279A - Semiconductor luminous element and manufacture thereof - Google Patents

Semiconductor luminous element and manufacture thereof

Info

Publication number
JPS57199279A
JPS57199279A JP8417581A JP8417581A JPS57199279A JP S57199279 A JPS57199279 A JP S57199279A JP 8417581 A JP8417581 A JP 8417581A JP 8417581 A JP8417581 A JP 8417581A JP S57199279 A JPS57199279 A JP S57199279A
Authority
JP
Japan
Prior art keywords
crystal layer
semiconductor crystal
region
elements
conductive type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8417581A
Other languages
Japanese (ja)
Inventor
Tatsuro Beppu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP8417581A priority Critical patent/JPS57199279A/en
Publication of JPS57199279A publication Critical patent/JPS57199279A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)

Abstract

PURPOSE:To fetch the luminescence efficiently from the front of the elements by a method wherein the thin region is provided on the mesa of the central part of the inverse bias junction face of the negetive resistance luminous elements. CONSTITUTION:The element is provided with the thyrister constitution wherein the second conductive type first semiconductor crystal layer 3, the first conductive type second semiconductor crystal layer 4 and the second conductive type third semiconductor crystal layer 5 are successively laminated. The junction comprised of the second semiconductor crystal layer 4 and the third crystal layer 5 is utilized as the luminous junction. The thickness of the first semiconductor crystal layer 3 is capacitated for arcing by means of the impressed voltage as specified. The ohmic electrodes 6 are arranged on the peripheral elements of the semiconductor crystal layer surface. The mesa part 2 of the first semiconductor crystal layer 3 becomes the arc region. The current flows centering on this region forming the region 8 into the main luminous region. This luminescence may be fetched out of the central front of the elements.
JP8417581A 1981-06-01 1981-06-01 Semiconductor luminous element and manufacture thereof Pending JPS57199279A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8417581A JPS57199279A (en) 1981-06-01 1981-06-01 Semiconductor luminous element and manufacture thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8417581A JPS57199279A (en) 1981-06-01 1981-06-01 Semiconductor luminous element and manufacture thereof

Publications (1)

Publication Number Publication Date
JPS57199279A true JPS57199279A (en) 1982-12-07

Family

ID=13823147

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8417581A Pending JPS57199279A (en) 1981-06-01 1981-06-01 Semiconductor luminous element and manufacture thereof

Country Status (1)

Country Link
JP (1) JPS57199279A (en)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS509593A (en) * 1973-04-23 1975-01-31

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS509593A (en) * 1973-04-23 1975-01-31

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