JPS57199274A - Schottky type light detecting element - Google Patents
Schottky type light detecting elementInfo
- Publication number
- JPS57199274A JPS57199274A JP56085248A JP8524881A JPS57199274A JP S57199274 A JPS57199274 A JP S57199274A JP 56085248 A JP56085248 A JP 56085248A JP 8524881 A JP8524881 A JP 8524881A JP S57199274 A JPS57199274 A JP S57199274A
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- reflecting film
- film
- incident light
- metal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
- H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
- H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
- H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
- H10F30/227—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a Schottky barrier
Landscapes
- Light Receiving Elements (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56085248A JPS57199274A (en) | 1981-06-01 | 1981-06-01 | Schottky type light detecting element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56085248A JPS57199274A (en) | 1981-06-01 | 1981-06-01 | Schottky type light detecting element |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS57199274A true JPS57199274A (en) | 1982-12-07 |
| JPS6244826B2 JPS6244826B2 (enrdf_load_stackoverflow) | 1987-09-22 |
Family
ID=13853262
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56085248A Granted JPS57199274A (en) | 1981-06-01 | 1981-06-01 | Schottky type light detecting element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57199274A (enrdf_load_stackoverflow) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4876586A (en) * | 1987-12-21 | 1989-10-24 | Sangamo-Weston, Incorporated | Grooved Schottky barrier photodiode for infrared sensing |
| US5179430A (en) * | 1988-05-24 | 1993-01-12 | Nec Corporation | Planar type heterojunction avalanche photodiode |
-
1981
- 1981-06-01 JP JP56085248A patent/JPS57199274A/ja active Granted
Non-Patent Citations (2)
| Title |
|---|
| JOURNAL OF APPLIED PHYSICS=1971 * |
| O.S.HEAVENS OPTICAL PROPERTIES OF THIN SOLID FILMS=1955 * |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4876586A (en) * | 1987-12-21 | 1989-10-24 | Sangamo-Weston, Incorporated | Grooved Schottky barrier photodiode for infrared sensing |
| US5179430A (en) * | 1988-05-24 | 1993-01-12 | Nec Corporation | Planar type heterojunction avalanche photodiode |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6244826B2 (enrdf_load_stackoverflow) | 1987-09-22 |
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