JPS57199227A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS57199227A
JPS57199227A JP56084344A JP8434481A JPS57199227A JP S57199227 A JPS57199227 A JP S57199227A JP 56084344 A JP56084344 A JP 56084344A JP 8434481 A JP8434481 A JP 8434481A JP S57199227 A JPS57199227 A JP S57199227A
Authority
JP
Japan
Prior art keywords
wafer
oxidizing atmosphere
subjecting
thermal treatment
manufacture
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP56084344A
Other languages
English (en)
Inventor
Shigeru Aoki
Seiichi Isomae
Kikuo Watanabe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP56084344A priority Critical patent/JPS57199227A/ja
Publication of JPS57199227A publication Critical patent/JPS57199227A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H01L21/3247—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering for altering the shape, e.g. smoothing the surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Formation Of Insulating Films (AREA)
JP56084344A 1981-06-03 1981-06-03 Manufacture of semiconductor device Pending JPS57199227A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56084344A JPS57199227A (en) 1981-06-03 1981-06-03 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56084344A JPS57199227A (en) 1981-06-03 1981-06-03 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS57199227A true JPS57199227A (en) 1982-12-07

Family

ID=13827884

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56084344A Pending JPS57199227A (en) 1981-06-03 1981-06-03 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS57199227A (ja)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4505759A (en) * 1983-12-19 1985-03-19 Mara William C O Method for making a conductive silicon substrate by heat treatment of oxygenated and lightly doped silicon single crystals
JPS61193459A (ja) * 1985-02-21 1986-08-27 Toshiba Corp シリコンウエハの処理方法
JPH01128531A (ja) * 1987-11-13 1989-05-22 Sharp Corp 酸化物薄膜の形成方法
EP1035235A1 (en) * 1998-08-31 2000-09-13 Shin-Etsu Handotai Co., Ltd Method for producing silicon single crystal wafer and silicon single crystal wafer

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4505759A (en) * 1983-12-19 1985-03-19 Mara William C O Method for making a conductive silicon substrate by heat treatment of oxygenated and lightly doped silicon single crystals
JPS61193459A (ja) * 1985-02-21 1986-08-27 Toshiba Corp シリコンウエハの処理方法
JPH01128531A (ja) * 1987-11-13 1989-05-22 Sharp Corp 酸化物薄膜の形成方法
EP1035235A1 (en) * 1998-08-31 2000-09-13 Shin-Etsu Handotai Co., Ltd Method for producing silicon single crystal wafer and silicon single crystal wafer
EP1035235A4 (en) * 1998-08-31 2002-05-15 Shinetsu Handotai Kk METHOD FOR PRODUCING SILICON SINGLE CRYSTAL WAFERS AND SILICON SINGLE CRYSTAL WAFERS

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