JPS57198633A - Method of producing semiconductor device - Google Patents

Method of producing semiconductor device

Info

Publication number
JPS57198633A
JPS57198633A JP57084147A JP8414782A JPS57198633A JP S57198633 A JPS57198633 A JP S57198633A JP 57084147 A JP57084147 A JP 57084147A JP 8414782 A JP8414782 A JP 8414782A JP S57198633 A JPS57198633 A JP S57198633A
Authority
JP
Japan
Prior art keywords
semiconductor device
producing semiconductor
producing
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP57084147A
Other languages
English (en)
Japanese (ja)
Inventor
Serge Deslauriers Jean
Joseph Levinstein Hyman
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
Western Electric Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co Inc filed Critical Western Electric Co Inc
Publication of JPS57198633A publication Critical patent/JPS57198633A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
    • H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
    • H01L21/32136—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas
    • H01L21/32137—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas of silicon-containing layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/28008—Making conductor-insulator-semiconductor electrodes
    • H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H01L21/28026—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
    • H01L21/28035—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being silicon, e.g. polysilicon, with or without impurities
    • H01L21/28044—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being silicon, e.g. polysilicon, with or without impurities the conductor comprising at least another non-silicon conductive layer
    • H01L21/28061—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being silicon, e.g. polysilicon, with or without impurities the conductor comprising at least another non-silicon conductive layer the conductor comprising a metal or metal silicide formed by deposition, e.g. sputter deposition, i.e. without a silicidation reaction

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Plasma & Fusion (AREA)
  • Drying Of Semiconductors (AREA)
  • Electrodes Of Semiconductors (AREA)
JP57084147A 1981-05-22 1982-05-20 Method of producing semiconductor device Pending JPS57198633A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US26643381A 1981-05-22 1981-05-22

Publications (1)

Publication Number Publication Date
JPS57198633A true JPS57198633A (en) 1982-12-06

Family

ID=23014579

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57084147A Pending JPS57198633A (en) 1981-05-22 1982-05-20 Method of producing semiconductor device

Country Status (8)

Country Link
JP (1) JPS57198633A (US06211527-20010403-C00003.png)
BE (1) BE893251A (US06211527-20010403-C00003.png)
CA (1) CA1202597A (US06211527-20010403-C00003.png)
DE (1) DE3219284A1 (US06211527-20010403-C00003.png)
FR (1) FR2506519B1 (US06211527-20010403-C00003.png)
GB (1) GB2098931B (US06211527-20010403-C00003.png)
IT (1) IT1151209B (US06211527-20010403-C00003.png)
NL (1) NL8202103A (US06211527-20010403-C00003.png)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58204538A (ja) * 1982-05-05 1983-11-29 シ−メンス・アクチエンゲゼルシヤフト 集積回路を含む基板上に金属ケイ化物・ポリシリコン二重層の構造を作る方法

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4414057A (en) * 1982-12-03 1983-11-08 Inmos Corporation Anisotropic silicide etching process
DE3315719A1 (de) * 1983-04-29 1984-10-31 Siemens AG, 1000 Berlin und 8000 München Verfahren zum herstellen von strukturen von aus metallsiliziden bzw. silizid-polysilizium bestehenden doppelschichten fuer integrierte halbleiterschaltungen durch reaktives ionenaetzen
US4528066A (en) * 1984-07-06 1985-07-09 Ibm Corporation Selective anisotropic reactive ion etching process for polysilicide composite structures
NL8500771A (nl) * 1985-03-18 1986-10-16 Philips Nv Werkwijze voor het vervaardigen van een halfgeleiderinrichting waarbij een op een laag siliciumoxide aanwezige dubbellaag - bestaande uit poly-si en een silicide - in een plasma wordt geetst.
EP0229104A1 (en) * 1985-06-28 1987-07-22 AT&T Corp. Procedure for fabricating devices involving dry etching
DE4114741C2 (de) * 1990-07-04 1998-11-12 Mitsubishi Electric Corp Verfahren zur Bildung einer Leiterbahn auf einem Halbleitersubstrat
US6177337B1 (en) * 1998-01-06 2001-01-23 International Business Machines Corporation Method of reducing metal voids in semiconductor device interconnection

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5519873A (en) * 1978-07-28 1980-02-12 Mitsubishi Electric Corp Forming method of metallic layer pattern for semiconductor

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5519873A (en) * 1978-07-28 1980-02-12 Mitsubishi Electric Corp Forming method of metallic layer pattern for semiconductor

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58204538A (ja) * 1982-05-05 1983-11-29 シ−メンス・アクチエンゲゼルシヤフト 集積回路を含む基板上に金属ケイ化物・ポリシリコン二重層の構造を作る方法

Also Published As

Publication number Publication date
IT8221430A0 (it) 1982-05-21
NL8202103A (nl) 1982-12-16
GB2098931B (en) 1985-02-06
BE893251A (fr) 1982-09-16
FR2506519B1 (fr) 1985-07-26
IT1151209B (it) 1986-12-17
GB2098931A (en) 1982-12-01
DE3219284A1 (de) 1982-12-16
DE3219284C2 (US06211527-20010403-C00003.png) 1989-08-10
FR2506519A1 (fr) 1982-11-26
CA1202597A (en) 1986-04-01

Similar Documents

Publication Publication Date Title
JPS57169245A (en) Method of producing semiconductor device
DE3272410D1 (en) Method of producing mosfet type semiconductor device
JPS57113267A (en) Method of producing semiconductor device
JPS5749235A (en) Method of producing semiconductor device
JPS5734367A (en) Method of producing semiconductor device
JPS57115871A (en) Method of producing semiconductor device
JPS57133678A (en) Method of producing semiconductor device
DE3380615D1 (en) Method of producing semiconductor device
JPS56131965A (en) Method of producing semiconductor device
JPS57115862A (en) Method of producing semiconductor memory device
JPS5783063A (en) Method of producing microminiature semiconductor device
JPS5763855A (en) Semiconductor device and method of producing same
DE3473531D1 (en) Method of forming semiconductor devices
GB2150756B (en) Methods of forming semiconductor device structures
JPS57162363A (en) Semiconductor device and method of producing same
JPS57157572A (en) Method of producing transistor
JPS5731180A (en) Method of producing semiconductor device
JPS56140668A (en) Method of manufacturing semiconductor device
GB8819232D0 (en) Method of producing semiconductor device
JPS5759323A (en) Method of producing semiconductor device
JPS56114352A (en) Method of manufacturing semiconductor device
JPS57141925A (en) Method of producing semiconductor device
JPS57109377A (en) Method of producing semiconductor device
JPS5795670A (en) Semiconductor device and method of producing same
JPS5749236A (en) Method of producing semiconductor device