JPS5719607A - Device for measuring thickness of dielectric film - Google Patents
Device for measuring thickness of dielectric filmInfo
- Publication number
- JPS5719607A JPS5719607A JP9533980A JP9533980A JPS5719607A JP S5719607 A JPS5719607 A JP S5719607A JP 9533980 A JP9533980 A JP 9533980A JP 9533980 A JP9533980 A JP 9533980A JP S5719607 A JPS5719607 A JP S5719607A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor laser
- dielectric film
- laser element
- plane mirror
- terminal voltage
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
- G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
- G01B11/06—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material
- G01B11/0616—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Length Measuring Devices By Optical Means (AREA)
Abstract
PURPOSE:To obtain a simple and convenient structure wherein a specimen cna be set very easily, by sensing the thickness of the dielectric film to be grown on a member having a reflecting surface as the magnitude of the terminal voltage of a semiconductor laser element. CONSTITUTION:A self-combining type semiconductor laser 10 is constituted by the semiconductor laser element 7, a lens 8 for forming parallel beams, and a plane mirror 9 facing the beams at a right angle and having a suitable reflectivity. The dielectric film 2 is formed on the plane mirror 9. The light irradiated from the semiconductor element 7 is reflected by the plane mirror 9, and returned to the light emitting part of the semiconductor laser element 7. The optical density in th active regiob in the semiconductor laser element 7 is varied, and the terminal voltage of the semiconductor laser element 7 is also varied. Therefore the variation in the reflectivity of the plane mirror 9 is sensed as the variation in the terminal voltage of the semiconductor laser element 7. Since the reflectivity of the plane mirror 9 varies with the thcikness of the dielectric film 2, the thickness of the dielectric film 2 can be monitored.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9533980A JPS5719607A (en) | 1980-07-10 | 1980-07-10 | Device for measuring thickness of dielectric film |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9533980A JPS5719607A (en) | 1980-07-10 | 1980-07-10 | Device for measuring thickness of dielectric film |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5719607A true JPS5719607A (en) | 1982-02-01 |
Family
ID=14134936
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP9533980A Pending JPS5719607A (en) | 1980-07-10 | 1980-07-10 | Device for measuring thickness of dielectric film |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5719607A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107806834A (en) * | 2016-09-09 | 2018-03-16 | 中微半导体设备(上海)有限公司 | A kind of multi-wavelength optical measurement apparatus and its measuring method |
-
1980
- 1980-07-10 JP JP9533980A patent/JPS5719607A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107806834A (en) * | 2016-09-09 | 2018-03-16 | 中微半导体设备(上海)有限公司 | A kind of multi-wavelength optical measurement apparatus and its measuring method |
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