JPS57194543A - Device for measuring characteristics of semiconductor device - Google Patents
Device for measuring characteristics of semiconductor deviceInfo
- Publication number
- JPS57194543A JPS57194543A JP56079188A JP7918881A JPS57194543A JP S57194543 A JPS57194543 A JP S57194543A JP 56079188 A JP56079188 A JP 56079188A JP 7918881 A JP7918881 A JP 7918881A JP S57194543 A JPS57194543 A JP S57194543A
- Authority
- JP
- Japan
- Prior art keywords
- misfet
- voltage
- section
- measurement
- gate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Testing Of Individual Semiconductor Devices (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Semiconductor Integrated Circuits (AREA)
Abstract
PURPOSE:To automate the measurement as well as to reduce the time required for the measurement of the titled characteristics by a method wherein an MISFET selective circuit section to be measured and a measuring circuit section, with which a measuring work is performed using the difference between the output voltage of a source common terminal and the gate voltage as a threshold voltage, are provided on a specific measuring device. CONSTITUTION:The arrangement section 3 of an MISFET row 2, an X-decoder section 4, a Y-decoder section 5, and address buffers 6 and 7 are provided on a semiconductor chip 1, an MISFET selective circuit to be measured, wherein FET with which a fixed voltage is stably applied to the gate will be selected, is constituted with decoders 4 and 5, a fixed voltage Vcc is applied to the gate of the selected MISFET, a fixed voltage VDD is applied to the drain, a circuit section to be used to measure the output voltage Vs from the common source terminal is provided, and the threshold voltage Vth is calculated as Vth=Vcc-Vs. Accordingly, the threshold voltage can be calculated in a short time, and the measurement can also be performed automatically.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP56079188A JPS57194543A (en) | 1981-05-27 | 1981-05-27 | Device for measuring characteristics of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP56079188A JPS57194543A (en) | 1981-05-27 | 1981-05-27 | Device for measuring characteristics of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS57194543A true JPS57194543A (en) | 1982-11-30 |
Family
ID=13682994
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP56079188A Pending JPS57194543A (en) | 1981-05-27 | 1981-05-27 | Device for measuring characteristics of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS57194543A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007335902A (en) * | 2007-09-07 | 2007-12-27 | Advantest Corp | System and method for manufacturing, device and method for management, and program |
CN115078953A (en) * | 2022-08-23 | 2022-09-20 | 合肥晶合集成电路股份有限公司 | Electrical property measuring method of semiconductor device and electronic equipment |
-
1981
- 1981-05-27 JP JP56079188A patent/JPS57194543A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007335902A (en) * | 2007-09-07 | 2007-12-27 | Advantest Corp | System and method for manufacturing, device and method for management, and program |
CN115078953A (en) * | 2022-08-23 | 2022-09-20 | 合肥晶合集成电路股份有限公司 | Electrical property measuring method of semiconductor device and electronic equipment |
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