JPS5557160A - Heat resistance measuring method for field effect transistor - Google Patents

Heat resistance measuring method for field effect transistor

Info

Publication number
JPS5557160A
JPS5557160A JP12926178A JP12926178A JPS5557160A JP S5557160 A JPS5557160 A JP S5557160A JP 12926178 A JP12926178 A JP 12926178A JP 12926178 A JP12926178 A JP 12926178A JP S5557160 A JPS5557160 A JP S5557160A
Authority
JP
Japan
Prior art keywords
heat resistance
fet
gate
time constant
source
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP12926178A
Other languages
Japanese (ja)
Inventor
Tetsuya Hikino
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP12926178A priority Critical patent/JPS5557160A/en
Publication of JPS5557160A publication Critical patent/JPS5557160A/en
Pending legal-status Critical Current

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  • Testing Of Individual Semiconductor Devices (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)

Abstract

PURPOSE: To secure calculation of the heat resistance without breaking the FET by reading the change of the forward voltage between the gate and the source immediately after becoming the cut-off state from the state under which the bias is applied to the active mode of the FET.
CONSTITUTION: The EFT is put under the active mode to consume a fixed amount of the power, and then OV is applied between the drain and the source along with a fixed amount of current flown between the gate and the source. Thus the change of the gate-source voltage VFGS is read. In this way, the heat resistance can be calculated between the channel cases of the EFT. In this case, a consideration must be given to the heat time constant formed by hyperbolas 31, 32 and 33 shwon in the diagram, where figure31 shows t01 (heat time constant between tbe avtive part and the chip), 32 is t02 (heat time constant between the chip and the case), and 33 is t03 (heat time constant between the case and the open air) respectively. At the same time, the negative voltage is applied to the gate when the FET is on to control drain current IDS. As a result, the heat resistance can be measured between the channel cases without breaking the FET.
COPYRIGHT: (C)1980,JPO&Japio
JP12926178A 1978-10-20 1978-10-20 Heat resistance measuring method for field effect transistor Pending JPS5557160A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12926178A JPS5557160A (en) 1978-10-20 1978-10-20 Heat resistance measuring method for field effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12926178A JPS5557160A (en) 1978-10-20 1978-10-20 Heat resistance measuring method for field effect transistor

Publications (1)

Publication Number Publication Date
JPS5557160A true JPS5557160A (en) 1980-04-26

Family

ID=15005187

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12926178A Pending JPS5557160A (en) 1978-10-20 1978-10-20 Heat resistance measuring method for field effect transistor

Country Status (1)

Country Link
JP (1) JPS5557160A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57173767A (en) * 1981-04-20 1982-10-26 Sony Corp Heat resistance measurement for mos-fet element
US8633726B2 (en) 2011-01-24 2014-01-21 Renesas Electronics Corporation Semiconductor device evaluation apparatus and semiconductor device evaluation method

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57173767A (en) * 1981-04-20 1982-10-26 Sony Corp Heat resistance measurement for mos-fet element
US8633726B2 (en) 2011-01-24 2014-01-21 Renesas Electronics Corporation Semiconductor device evaluation apparatus and semiconductor device evaluation method

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