JPS57190350A - Manufacrure of semiconductor device - Google Patents
Manufacrure of semiconductor deviceInfo
- Publication number
- JPS57190350A JPS57190350A JP56075188A JP7518881A JPS57190350A JP S57190350 A JPS57190350 A JP S57190350A JP 56075188 A JP56075188 A JP 56075188A JP 7518881 A JP7518881 A JP 7518881A JP S57190350 A JPS57190350 A JP S57190350A
- Authority
- JP
- Japan
- Prior art keywords
- type
- films
- layer
- layers
- si3n4
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title abstract 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 6
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 5
- 229910052681 coesite Inorganic materials 0.000 abstract 3
- 229910052906 cristobalite Inorganic materials 0.000 abstract 3
- 238000005530 etching Methods 0.000 abstract 3
- 239000000377 silicon dioxide Substances 0.000 abstract 3
- 235000012239 silicon dioxide Nutrition 0.000 abstract 3
- 229910052682 stishovite Inorganic materials 0.000 abstract 3
- 229910052905 tridymite Inorganic materials 0.000 abstract 3
- 230000006866 deterioration Effects 0.000 abstract 1
- 238000009792 diffusion process Methods 0.000 abstract 1
- 238000002347 injection Methods 0.000 abstract 1
- 239000007924 injection Substances 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 230000003071 parasitic effect Effects 0.000 abstract 1
- 230000000149 penetrating effect Effects 0.000 abstract 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
- H10D84/65—Integrated injection logic
Landscapes
- Bipolar Transistors (AREA)
- Bipolar Integrated Circuits (AREA)
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56075188A JPS57190350A (en) | 1981-05-19 | 1981-05-19 | Manufacrure of semiconductor device |
| US06/378,480 US4433470A (en) | 1981-05-19 | 1982-05-14 | Method for manufacturing semiconductor device utilizing selective etching and diffusion |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56075188A JPS57190350A (en) | 1981-05-19 | 1981-05-19 | Manufacrure of semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS57190350A true JPS57190350A (en) | 1982-11-22 |
| JPS6242397B2 JPS6242397B2 (enrdf_load_stackoverflow) | 1987-09-08 |
Family
ID=13568968
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56075188A Granted JPS57190350A (en) | 1981-05-19 | 1981-05-19 | Manufacrure of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57190350A (enrdf_load_stackoverflow) |
-
1981
- 1981-05-19 JP JP56075188A patent/JPS57190350A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6242397B2 (enrdf_load_stackoverflow) | 1987-09-08 |
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