JPS57186373A - Semiconductor pressure sensor - Google Patents
Semiconductor pressure sensorInfo
- Publication number
- JPS57186373A JPS57186373A JP7102581A JP7102581A JPS57186373A JP S57186373 A JPS57186373 A JP S57186373A JP 7102581 A JP7102581 A JP 7102581A JP 7102581 A JP7102581 A JP 7102581A JP S57186373 A JPS57186373 A JP S57186373A
- Authority
- JP
- Japan
- Prior art keywords
- resistors
- straight line
- gage
- change
- pressure sensor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 230000035945 sensitivity Effects 0.000 abstract 2
- 238000007796 conventional method Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/84—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by variation of applied mechanical force, e.g. of pressure
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Measuring Fluid Pressure (AREA)
- Pressure Sensors (AREA)
Abstract
PURPOSE:To improve sensitivity by arranging the gage resistors of the semiconductor pressure sensor so that the change of the inside gage resistor reaches the maximum value and the change of the outside gage resistor the minimum value without being disposed onto one straight line. CONSTITUTION:The diaphragm surface of a pressure sensor is formed in the (1, (-1), 0) face of Si, the inside gage resistors 4 are arranged onto a diameter in the <1, (-1),)> dirction, and the outside gage resistors 3 are disposed onto a straight line 9 shown at an angle theta in predetermined relationship with the diameter in said direction at the distance of gamma from the center as the Poisson ratio V of Si or near the straight line in polar coordinates making the center of a diaphragm as a pole and a radius a in the <1, (-), 0> direction as an original line. The change of the inside gage resistors is maximum and the change of the outside gage resistors is minimum at that time, and the sensitivity of the sensor is improved when the sensor is connected by a conductive film through a conventional method. When the resistors 3 are mounted near the outer circumference of the straight line 9 and the resistors 3 and 4 are paralleled on production, the resistors 3 may be set up so as to cross the straight line 9.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7102581A JPS57186373A (en) | 1981-05-12 | 1981-05-12 | Semiconductor pressure sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7102581A JPS57186373A (en) | 1981-05-12 | 1981-05-12 | Semiconductor pressure sensor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS57186373A true JPS57186373A (en) | 1982-11-16 |
Family
ID=13448566
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7102581A Pending JPS57186373A (en) | 1981-05-12 | 1981-05-12 | Semiconductor pressure sensor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57186373A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60243534A (en) * | 1984-04-03 | 1985-12-03 | エルサグ・インターナショナル・ビー・ブイ | Diaphragm deflection sensor for molten silica diaphragm module |
| JPS6189137U (en) * | 1984-11-16 | 1986-06-10 |
-
1981
- 1981-05-12 JP JP7102581A patent/JPS57186373A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60243534A (en) * | 1984-04-03 | 1985-12-03 | エルサグ・インターナショナル・ビー・ブイ | Diaphragm deflection sensor for molten silica diaphragm module |
| JPH0528336B2 (en) * | 1984-04-03 | 1993-04-26 | Elsag Int Bv | |
| JPS6189137U (en) * | 1984-11-16 | 1986-06-10 |
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