JPS57179989A - Sense circuit - Google Patents

Sense circuit

Info

Publication number
JPS57179989A
JPS57179989A JP56064441A JP6444181A JPS57179989A JP S57179989 A JPS57179989 A JP S57179989A JP 56064441 A JP56064441 A JP 56064441A JP 6444181 A JP6444181 A JP 6444181A JP S57179989 A JPS57179989 A JP S57179989A
Authority
JP
Japan
Prior art keywords
inputs
drop
driven
state
circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP56064441A
Other languages
Japanese (ja)
Inventor
Atsushi Oritani
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP56064441A priority Critical patent/JPS57179989A/en
Publication of JPS57179989A publication Critical patent/JPS57179989A/en
Pending legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C7/00Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/06Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
    • G11C7/062Differential amplifiers of non-latching type, e.g. comparators, long-tailed pairs

Landscapes

  • Static Random-Access Memory (AREA)

Abstract

PURPOSE:To obtain a high speed, high sensitive and highly stabilized sensing circuit, by providing an MOS transistor receiving an output to a gate, between a common connecting point of a source and a power supply. CONSTITUTION:Assuming that a signal Y is at H level, a sensing amplifier is operative and an in-phase component Vc of inputs DB and DB' is fluctuated and the DB and DB' are both increased. First, a transistor (TR)QA4 turns on, QA1 and QA2 are also driven to be on-state and outputs SD and SD' both drop. On the other hand, when the inputs DB and DB' drop, the TRs QA1 and QA2 are driven to off-state, and a common source potential Vs drops. That is, this circuit is operated suppressively against the in-phase change of inputs to rise or drop the common source voltage Vs being a reference point to the input signals DB and DB' together with the said input signal.
JP56064441A 1981-04-28 1981-04-28 Sense circuit Pending JPS57179989A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56064441A JPS57179989A (en) 1981-04-28 1981-04-28 Sense circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56064441A JPS57179989A (en) 1981-04-28 1981-04-28 Sense circuit

Publications (1)

Publication Number Publication Date
JPS57179989A true JPS57179989A (en) 1982-11-05

Family

ID=13258362

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56064441A Pending JPS57179989A (en) 1981-04-28 1981-04-28 Sense circuit

Country Status (1)

Country Link
JP (1) JPS57179989A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6126995A (en) * 1984-07-18 1986-02-06 Toshiba Corp Sensor circuit

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6126995A (en) * 1984-07-18 1986-02-06 Toshiba Corp Sensor circuit

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