JPS57178317A - Manufacture of semiconductor single crystal - Google Patents

Manufacture of semiconductor single crystal

Info

Publication number
JPS57178317A
JPS57178317A JP56062566A JP6256681A JPS57178317A JP S57178317 A JPS57178317 A JP S57178317A JP 56062566 A JP56062566 A JP 56062566A JP 6256681 A JP6256681 A JP 6256681A JP S57178317 A JPS57178317 A JP S57178317A
Authority
JP
Japan
Prior art keywords
oxide
sio2
single crystal
gas
oxygen gas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56062566A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6152971B2 (OSRAM
Inventor
Yukinobu Shinoda
Nobuo Matsumoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NTT Inc
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP56062566A priority Critical patent/JPS57178317A/ja
Publication of JPS57178317A publication Critical patent/JPS57178317A/ja
Publication of JPS6152971B2 publication Critical patent/JPS6152971B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10P14/2921—
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/02—Pretreatment of the material to be coated
    • C23C16/0272—Deposition of sub-layers, e.g. to promote the adhesion of the main coating
    • C23C16/029—Graded interfaces
    • H10P14/24—
    • H10P14/3411—

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Recrystallisation Techniques (AREA)
JP56062566A 1981-04-27 1981-04-27 Manufacture of semiconductor single crystal Granted JPS57178317A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56062566A JPS57178317A (en) 1981-04-27 1981-04-27 Manufacture of semiconductor single crystal

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56062566A JPS57178317A (en) 1981-04-27 1981-04-27 Manufacture of semiconductor single crystal

Publications (2)

Publication Number Publication Date
JPS57178317A true JPS57178317A (en) 1982-11-02
JPS6152971B2 JPS6152971B2 (OSRAM) 1986-11-15

Family

ID=13203961

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56062566A Granted JPS57178317A (en) 1981-04-27 1981-04-27 Manufacture of semiconductor single crystal

Country Status (1)

Country Link
JP (1) JPS57178317A (OSRAM)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59104119A (ja) * 1982-12-07 1984-06-15 Fujitsu Ltd 半導体装置の製造方法
JPS63228625A (ja) * 1987-03-18 1988-09-22 Toshiba Corp 薄膜形成方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59104119A (ja) * 1982-12-07 1984-06-15 Fujitsu Ltd 半導体装置の製造方法
JPS63228625A (ja) * 1987-03-18 1988-09-22 Toshiba Corp 薄膜形成方法

Also Published As

Publication number Publication date
JPS6152971B2 (OSRAM) 1986-11-15

Similar Documents

Publication Publication Date Title
TW325601B (en) Process of manufacturing thin film semiconductor
JPS6433936A (en) Manufacture of semiconductor device
GB1490665A (en) Method of growing epitaxial layers of silicon
EP1271625A3 (en) Method of fabrication compound semiconductor device
EP0253611A3 (en) Method of epitaxially growing gallium arsenide on silicon
GB1368315A (en) Method for producing semiconductor on-insulator electronic devices
JPS57178317A (en) Manufacture of semiconductor single crystal
JPS5717125A (en) Manufacture of semiconductor device
JPS54157779A (en) Production of silicon single crystal
JPS6459807A (en) Material for thin-film transistor
JPS6477924A (en) Manufacture of semiconductor device
EP0366276A3 (en) Method for forming crystal
JPS57114239A (en) Manufacture of semiconductor device
UA16735A1 (uk) Спосіб обробки кристалічhих елемеhтів hа осhові селеhіду циhку
JPS6410618A (en) Method of growing semiconductor crystal
JPS56142642A (en) Manufacture of semiconductor device
JPS6455847A (en) Manufacture of semiconductor device
KR960016830B1 (en) A method for forming gate oxide of semiconductor device
JPS6428374A (en) Method for selectively growing tungsten
JPS6421074A (en) Method for selectively growing thin metallic film
JPS56118329A (en) Vapor phase epitaxial growth method for compound semiconductor monocrystalling thin film
JPS6430210A (en) Method for growing iii-v compound semiconductor
JPS561525A (en) Epitaxial growing method of silicon crystal
JPS6410617A (en) Formation of polycrystalline silicon film
JPS57106144A (en) Manufacture of semiconductor device