JPS6152971B2 - - Google Patents
Info
- Publication number
- JPS6152971B2 JPS6152971B2 JP56062566A JP6256681A JPS6152971B2 JP S6152971 B2 JPS6152971 B2 JP S6152971B2 JP 56062566 A JP56062566 A JP 56062566A JP 6256681 A JP6256681 A JP 6256681A JP S6152971 B2 JPS6152971 B2 JP S6152971B2
- Authority
- JP
- Japan
- Prior art keywords
- single crystal
- crystal
- substrate
- semiconductor
- grown
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H10P14/2921—
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/02—Pretreatment of the material to be coated
- C23C16/0272—Deposition of sub-layers, e.g. to promote the adhesion of the main coating
- C23C16/029—Graded interfaces
-
- H10P14/24—
-
- H10P14/3411—
Landscapes
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Recrystallisation Techniques (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56062566A JPS57178317A (en) | 1981-04-27 | 1981-04-27 | Manufacture of semiconductor single crystal |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56062566A JPS57178317A (en) | 1981-04-27 | 1981-04-27 | Manufacture of semiconductor single crystal |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS57178317A JPS57178317A (en) | 1982-11-02 |
| JPS6152971B2 true JPS6152971B2 (OSRAM) | 1986-11-15 |
Family
ID=13203961
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56062566A Granted JPS57178317A (en) | 1981-04-27 | 1981-04-27 | Manufacture of semiconductor single crystal |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57178317A (OSRAM) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59104119A (ja) * | 1982-12-07 | 1984-06-15 | Fujitsu Ltd | 半導体装置の製造方法 |
| JP2695778B2 (ja) * | 1987-03-18 | 1998-01-14 | 株式会社東芝 | 薄膜形成方法 |
-
1981
- 1981-04-27 JP JP56062566A patent/JPS57178317A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS57178317A (en) | 1982-11-02 |
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