JPS57175720A - Method for forming silicon film - Google Patents

Method for forming silicon film

Info

Publication number
JPS57175720A
JPS57175720A JP5997181A JP5997181A JPS57175720A JP S57175720 A JPS57175720 A JP S57175720A JP 5997181 A JP5997181 A JP 5997181A JP 5997181 A JP5997181 A JP 5997181A JP S57175720 A JPS57175720 A JP S57175720A
Authority
JP
Japan
Prior art keywords
silicon film
forming silicon
forming
film
silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP5997181A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6138268B2 (enExample
Inventor
Takeshige Ichimura
Yukio Takeda
Yoshiyuki Uchida
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fuji Electric Co Ltd
Original Assignee
Fuji Electric Co Ltd
Fuji Electric Corporate Research and Development Ltd
Fuji Electric Manufacturing Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Electric Co Ltd, Fuji Electric Corporate Research and Development Ltd, Fuji Electric Manufacturing Co Ltd filed Critical Fuji Electric Co Ltd
Priority to JP5997181A priority Critical patent/JPS57175720A/ja
Publication of JPS57175720A publication Critical patent/JPS57175720A/ja
Publication of JPS6138268B2 publication Critical patent/JPS6138268B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/452—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by activating reactive gas streams before their introduction into the reaction chamber, e.g. by ionisation or addition of reactive species
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/24—Deposition of silicon only

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
JP5997181A 1981-04-21 1981-04-21 Method for forming silicon film Granted JPS57175720A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5997181A JPS57175720A (en) 1981-04-21 1981-04-21 Method for forming silicon film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5997181A JPS57175720A (en) 1981-04-21 1981-04-21 Method for forming silicon film

Publications (2)

Publication Number Publication Date
JPS57175720A true JPS57175720A (en) 1982-10-28
JPS6138268B2 JPS6138268B2 (enExample) 1986-08-28

Family

ID=13128559

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5997181A Granted JPS57175720A (en) 1981-04-21 1981-04-21 Method for forming silicon film

Country Status (1)

Country Link
JP (1) JPS57175720A (enExample)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2555614A1 (fr) * 1983-08-16 1985-05-31 Canon Kk Procede pour former un film sur un substrat par decomposition en phase vapeur
WO2003074757A1 (en) * 2002-03-01 2003-09-12 The Chinese University Of Hong Kong Method for selectively removing hydrogen from molecules
EP2045358A3 (de) * 2007-09-11 2010-11-03 Näbauer, Anton Verringerung des Verbrauchs von Prozessgasen bei der chemischen Gasphasenabscheidung von siliziumhaltigen Schichten bei der als Reaktionsprodukt neben der abzuscheidenden Schicht Wasserstoff entsteht
JP2024118353A (ja) * 2023-02-20 2024-08-30 大陽日酸株式会社 供給方法および供給装置

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2555614A1 (fr) * 1983-08-16 1985-05-31 Canon Kk Procede pour former un film sur un substrat par decomposition en phase vapeur
WO2003074757A1 (en) * 2002-03-01 2003-09-12 The Chinese University Of Hong Kong Method for selectively removing hydrogen from molecules
US7998537B2 (en) 2002-03-01 2011-08-16 The Chinese University Of Hong Kong Method for selectively removing hydrogen from molecules
EP2045358A3 (de) * 2007-09-11 2010-11-03 Näbauer, Anton Verringerung des Verbrauchs von Prozessgasen bei der chemischen Gasphasenabscheidung von siliziumhaltigen Schichten bei der als Reaktionsprodukt neben der abzuscheidenden Schicht Wasserstoff entsteht
JP2024118353A (ja) * 2023-02-20 2024-08-30 大陽日酸株式会社 供給方法および供給装置

Also Published As

Publication number Publication date
JPS6138268B2 (enExample) 1986-08-28

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