JPS57173962A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS57173962A JPS57173962A JP6012581A JP6012581A JPS57173962A JP S57173962 A JPS57173962 A JP S57173962A JP 6012581 A JP6012581 A JP 6012581A JP 6012581 A JP6012581 A JP 6012581A JP S57173962 A JPS57173962 A JP S57173962A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- central region
- stress
- conductivity type
- resistors
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/0802—Resistors only
Abstract
PURPOSE:To obtain a precise ratio between two resistors by a method wherein a pair of resistors with their conductivity type reverse to that of the substrate is formed at the central region of the substrate. CONSTITUTION:On a semiconductor substrate 1 of either conductivity type, resistor elements R1-R4 are formed with their conductivity type reverse to that of the substrate 1. Stress in the substrate 1 caused by resin sealing thereof results in a piezoresistance effect causing a change in the value of resistance. The stress, the substrate is exposed to, is the greatest at the central region and smaller toward the periphery. A change in the stress, however, is the smallest at the central region. Locating a split resistor or a plurality of resistor elements R1 and R2 with the ratio of resistance between requiring precision at the central region 23 (surrounded by a quadrangle consisting of four sides each of which divides halfways the line l extending from the center 0 to a substrate side), results in a precise ratio maintained between them.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6012581A JPS57173962A (en) | 1981-04-21 | 1981-04-21 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6012581A JPS57173962A (en) | 1981-04-21 | 1981-04-21 | Semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS57173962A true JPS57173962A (en) | 1982-10-26 |
Family
ID=13133093
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6012581A Pending JPS57173962A (en) | 1981-04-21 | 1981-04-21 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57173962A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2021018217A (en) * | 2019-07-24 | 2021-02-15 | ローム株式会社 | Voltage monitoring circuit |
| WO2021079666A1 (en) * | 2019-10-25 | 2021-04-29 | 日立Astemo株式会社 | Chip temperature sensor for semiconductor chip, and flow rate measurement device |
-
1981
- 1981-04-21 JP JP6012581A patent/JPS57173962A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2021018217A (en) * | 2019-07-24 | 2021-02-15 | ローム株式会社 | Voltage monitoring circuit |
| WO2021079666A1 (en) * | 2019-10-25 | 2021-04-29 | 日立Astemo株式会社 | Chip temperature sensor for semiconductor chip, and flow rate measurement device |
| JP2021067595A (en) * | 2019-10-25 | 2021-04-30 | 日立Astemo株式会社 | Chip temperature sensor of semiconductor chip, and flow rate measurement device |
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