JPS57170566A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS57170566A
JPS57170566A JP5564881A JP5564881A JPS57170566A JP S57170566 A JPS57170566 A JP S57170566A JP 5564881 A JP5564881 A JP 5564881A JP 5564881 A JP5564881 A JP 5564881A JP S57170566 A JPS57170566 A JP S57170566A
Authority
JP
Japan
Prior art keywords
mesa
tial3
deformed
reliability
aluminum
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5564881A
Other languages
Japanese (ja)
Inventor
Katsuhiko Takigami
Yasuhisa Oana
Shusuke Kotake
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP5564881A priority Critical patent/JPS57170566A/en
Publication of JPS57170566A publication Critical patent/JPS57170566A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Die Bonding (AREA)

Abstract

PURPOSE:To improve the reliability of a semiconductor device by forming a compound of Al and Ti on the surface of a cathode voltage collecting metal, thereby preventing the extension of mesa to the side surface and the sharpness of the deformed shape. CONSTITUTION:A cathode electrode 32 of aluminum is formed on a mesa type cathode region, and Ti 41 is deposited. After Ti 41 is then selectively etched, an element 11 is treated in N2 at 450 deg.C for 30min. Then, the aluminum and the silicon are chemically connected, and TiAl3 42 is simultaneously formed. Then, unreacted Ti is etched with a solution of HF-HNO3 series. The TiAl3 is chemically extremely stable and extremely high mechanical strength, and is not readily plastically deformed. Accordingly, when a terminal board is pressurized, it is not extended to the side surface of a mesa, not sharply deformed, thereby improving the reliability of the device.
JP5564881A 1981-04-15 1981-04-15 Semiconductor device Pending JPS57170566A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5564881A JPS57170566A (en) 1981-04-15 1981-04-15 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5564881A JPS57170566A (en) 1981-04-15 1981-04-15 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS57170566A true JPS57170566A (en) 1982-10-20

Family

ID=13004638

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5564881A Pending JPS57170566A (en) 1981-04-15 1981-04-15 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS57170566A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60257166A (en) * 1984-06-01 1985-12-18 Hitachi Ltd Semiconductor device
JPH01307235A (en) * 1988-06-03 1989-12-12 Mitsubishi Electric Corp Semiconductor device
EP0614217A1 (en) * 1993-03-01 1994-09-07 Motorola, Inc. A process for forming an intermetallic layer and a device formed by the process

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60257166A (en) * 1984-06-01 1985-12-18 Hitachi Ltd Semiconductor device
JPH01307235A (en) * 1988-06-03 1989-12-12 Mitsubishi Electric Corp Semiconductor device
EP0614217A1 (en) * 1993-03-01 1994-09-07 Motorola, Inc. A process for forming an intermetallic layer and a device formed by the process

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