JPS57170540A - Forming method for wire structure - Google Patents
Forming method for wire structureInfo
- Publication number
- JPS57170540A JPS57170540A JP56055637A JP5563781A JPS57170540A JP S57170540 A JPS57170540 A JP S57170540A JP 56055637 A JP56055637 A JP 56055637A JP 5563781 A JP5563781 A JP 5563781A JP S57170540 A JPS57170540 A JP S57170540A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- covered
- substrate
- insulator
- air gaps
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Electrodes Of Semiconductors (AREA)
- Manufacturing Of Printed Circuit Boards (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Formation Of Insulating Films (AREA)
- Manufacturing Of Electric Cables (AREA)
Abstract
PURPOSE:To flatten the surface of a wiring structure by employing oxide glass as an insulator, and heating it to melt in viscous flow when the structure is formed by burying air gaps between conductors formed on a substrate with peripheral insulator having air gaps without interval with the insulator. CONSTITUTION:A conductor layer 8 made of a plurality of Mo is formed on a substrate 1, is covered with an etching mask 9 of resist, and an insulating layer 10 of oxide glass is covered by a sputtering method in nearly equal thickness to the layer 8 with molten glass target made of 50wt% of lead monoxide and 50wt% of silicon dioxide on the overall surface. Then, the substrate 1 is dipped in an ultrasonic wave bath of acetone, the mask 9 is removed together with the layer 10 covered thereon, is heated at 800 deg.C in N2 atomosphere for approx. 30min, the layer 10 is flowed in viscous state, and air gaps formed between the layers 8 and 10 are buried with the layer 10 without interval. In this manner, the layer 10 is fluidized with oxide gas having low compound temperature, thereby flattening the surface.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP56055637A JPS57170540A (en) | 1981-04-15 | 1981-04-15 | Forming method for wire structure |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP56055637A JPS57170540A (en) | 1981-04-15 | 1981-04-15 | Forming method for wire structure |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS57170540A true JPS57170540A (en) | 1982-10-20 |
Family
ID=13004310
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP56055637A Pending JPS57170540A (en) | 1981-04-15 | 1981-04-15 | Forming method for wire structure |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS57170540A (en) |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5187981A (en) * | 1975-01-31 | 1976-07-31 | Hitachi Ltd |
-
1981
- 1981-04-15 JP JP56055637A patent/JPS57170540A/en active Pending
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5187981A (en) * | 1975-01-31 | 1976-07-31 | Hitachi Ltd |
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